Optoelectronic element and manufacturing method thereof
An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
1. An optoelectronic element, comprising:
an optoelectronic unit comprising a first top surface and a first metal layer on the first top surface;
a first transparent structure surrounding the optoelectronic unit and exposing the first top surface;
a first contact layer on the first transparent structure, comprising a connective part electrically connected with the first metal layer;
a second metal layer on the first top surface and separated from the first metal layer; and
a first conductive layer formed on the second metal layer, separated from the first metal layer and comprising a portion overlapping the first metal layer in a vertical direction.
2. The optoelectronic element of claim 1 , further comprising:
a second conductive layer on the first contact layer; and
an optical layer between the first contact layer and the second conductive layer.
3. The optoelectronic element of claim 1 , further comprising a first isolating layer on the first contact layer, wherein the first isolating layer is an optical layer.
4. The optoelectronic element of claim 1 , further comprising:
an optical layer between the second metal layer and the first conductive layer.
5. An optoelectronic element, comprising:
an optoelectronic unit comprising a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface, wherein the optoelectronic unit generates a light;
a first transparent structure covering the lateral surface and exposing the first top surface;
an optical layer on the first top surface and the first transparent structure, diffusing the light;
a first opening through the optical layer;
a first conductive layer on the optical layer;
a first metal layer formed on the first top surface; and
a recess between the optical layer and the first metal layer,
wherein the first conductive layer fills the recess.
6. The optoelectronic element of claim 5 , wherein the first conductive layer comprises:
a first plug region above the first metal layer; and
a first extended region overlapping the optical layer,
wherein a distance between the first plug region and the first top surface is smaller than that between the first extended region and the first top surface.
7. The optoelectronic element of claim 5 , wherein the first conductive layer comprises a first plug region above the first metal layer, wherein a distance between the first plug region and the first top surface is smaller than that between the top surface of the optical layer and the first top surface.
8. An optoelectronic element, comprising:
an optoelectronic unit comprising a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface;
a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit;
a second transparent structure on the first transparent structure;
a first insulating layer on the first top surface and the first transparent structure;
a first opening through the first insulating layer;
a first conductive layer on the first insulating layer and electrically connecting to the optoelectronic unit via the first opening; and
a wavelength-converting layer covering the first transparent structure and the second transparent structure.
9. The optoelectronic element of claim 8 , further comprising a third transparent structure on the wavelength-converting layer.
10. The optoelectronic element of claim 9 , wherein the third transparent structure comprises an encapsulating part fully covering the wavelength-converting layer.
11. The optoelectronic element of claim 10 , wherein the encapsulating part comprises a dome shape.
12. The optoelectronic element of claim 9 , wherein refractive indices of the first transparent structure, the second transparent structure, and the third transparent structure are gradually changed.
13. The optoelectronic element of claim 9 , wherein the third transparent structure comprises a trapezoid transparent carrier on the wavelength-converting layer.
14. The optoelectronic element of claim 8 , wherein a sidewall of the first transparent structure or the second transparent structure is inclined.