IP Library Granted Patent US 9,662,025
Granted Patent B2
US 9,662,025 · App. 13/886,934 · Granted May 30, 2017

Low noise analog electronic circuit design for recording peripheral nerve activity

Inventors: Adeline Zbrzeski (Miami, FL); Ranu Jung (Miami Beach, FL)
Assignee: The Florida International University Board of Trustees
A61B5/04001A61B5/7225H03F3/45179H03F3/45475H03F2200/261H03F2203/45138
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Quick Facts
Patent No.
US 9,662,025
App. No.
13/886,934
Granted
May 30, 2017
Kind
B2
Abstract

Circuits and circuit systems to record activity (e.g., peripheral nerve activity) are provided. The circuits advantageously have good noise characteristics (e.g., low noise), as well as low power consumption and low area. A circuit can be implantable (e.g., in a human subject). Methods of designing, manufacturing, and using such circuits and circuit systems are also provided.

Claims (54)

1. An implantable circuit, comprising a low noise amplifier, the low noise amplifier comprising an operational transconductance amplifier (OTA) having at least two differential input series-connected transistors (SCT), each differential input SCT including an input terminal that is directly connected to the input terminal of each other differential input SCT, the input terminal of each differential input SCT being connected to the same differential input of the OTA, and the at least two differential input SCTs being connected to each other such that the entire current flowing through each differential input SCT flows into every other differential input SCT.

2. The implantable circuit according to claim 1 , wherein the low noise amplifier is configured such that: the area per channel of the low noise amplifier is no more than 0.05 mm 2 ; the power consumption per channel of the low noise amplifier is more than 0 μW and no more than 150 μW; and the input-referred voltage noise density of the circuit is more than 0 nV/(Hz 1/2 ) and no more than 50 nV/(Hz 1/2 ) on 100 Hz-4 kHz bandwidth and more than 0 nV/(Hz 1/2 ) and no more than 30 nV/(Hz 1/2 ) on the main white Gaussian noise contribution over the full bandwidth.

3. The implantable circuit according to claim 1 , further comprising a highpass filter in operable communication with the low noise amplifier.

4. The implantable circuit according to claim 3 , wherein the highpass filter is configured to tune the bandwidth in a range of about 100 Hz and 500 Hz.

5. The implantable circuit according to claim 3 , wherein the highpass filter is a passive resistor-capacitor filter circuit.

6. The implantable circuit according to claim 3 , further comprising a discrete gain amplifier in operable communication with the highpass filter.

7. The implantable circuit according to claim 6 , wherein the discrete gain amplifier is a programmable discrete gain amplifier.

8. The implantable circuit according to claim 6 , wherein the implantable circuit is configured such that: the area per channel of the circuit is no more than 0.05 mm 2 ; the power consumption per channel of the circuit is more than 0 μW and no more than 150 μW; and the input-referred voltage noise density of the circuit is more than 0 nV/(Hz 1/2 ) and no more than 50 nV/(Hz 1/2 ) on 100 Hz-4 kHz bandwidth and more than 0 nV/(Hz 1/2 ) and no more than 30 nV/(Hz 1/2 ) on the main white Gaussian noise contribution over the full bandwidth.

9. The implantable circuit according to claim 6 , further comprising at least one processing circuit in operable communication with the discrete gain amplifier.

10. The implantable circuit according to claim 9 , wherein the at least one processing circuit comprises a comparator.

11. The implantable circuit according to claim 9 , wherein the discrete gain amplifier is configured to adapt a signal from the highpass filter to the dynamic input voltage/current range of the at least one processing circuit.

12. The implantable circuit according to claim 1 , wherein the circuit is configured to record low amplitude neural signals having an amplitude of less than 60 μV peak-to-peak.

13. The implantable circuit according to claim 12 , wherein the circuit is configured to reject signals with frequency components outside a tunable bandwidth.

14. The implantable circuit according to claim 13 , wherein a minimum frequency of the tunable bandwidth is 100 Hz, and wherein a maximum frequency of the tunable bandwidth is 10 kHz.

15. The implantable circuit according to claim 14 , wherein the area per channel of the low noise amplifier is no more than 0.05 mm 2 .

16. A system for recording peripheral nerve activity, comprising:

the implantable circuit according to claim 1 ; and

at least one electrode in operable communication with the implantable circuit.

17. The system according to claim 16 , wherein the at least one electrode is a longitudinal intrafascicular electrode.

18. An implantable circuit, comprising:

a low noise amplifier;

a highpass filter in operable communication with the low noise amplifier;

a discrete gain amplifier in operable communication with the highpass filter; and

at least one processing circuit in operable communication with the discrete gain amplifier,

the low noise amplifier comprising an operational transconductance amplifier (OTA) having at least two differential input series-connected transistors (SCT), each input differential SCT including an input terminal that is directly connected to the input terminal of each other differential input SCT, each differential input SCT being connected to the same differential input of the OTA, and the at least two differential input SCI's being connected to each other such that the entire current flowing through each differential input SCT flows into every other differential input SCT, and

the implantable circuit being configured such that: the area per channel of the circuit is no more than 0.05 mm 2 ; the power consumption per channel of the circuit is more than 0 μW and no more than 150 μW; and the input-referred voltage noise density of the circuit is more than 0 nV/(Hz 1/2 ) and no more than 50 nV/(Hz 1/2 ) on 100 Hz-4 kHz bandwidth and more than 0 nV/(Hz 1/2 ) and no more than 30 nV/(Hz 1/2 ) on the main white Gaussian noise contribution over the full bandwidth.

19. The implantable circuit according to claim 18 , wherein the highpass filter is configured to tune the bandwidth in a range of about 100 Hz and 500 Hz,

wherein the highpass filter is a passive resistor-capacitor filter circuit,

wherein the discrete gain amplifier is a programmable discrete gain amplifier,

wherein the at least one processing circuit comprises a comparator,

wherein the discrete gain amplifier is configured to adapt a signal from the highpass filter to the dynamic input voltage/current range of the at least one processing circuit,

wherein the circuit is configured to record low amplitude neural signals having an amplitude of less than 60 μV peak-to-peak,

wherein the circuit is configured to reject signals with frequency components outside a tunable bandwidth,

wherein a minimum frequency of the tunable bandwidth is 100 Hz, and wherein a maximum frequency of the tunable bandwidth is 10 kHz, and

wherein the area per channel of the low noise amplifier is no more than 0.05 mm 2 .

20. A system for recording peripheral nerve activity, comprising:

the implantable circuit according to claim 18 ; and

at least one electrode in operable communication with the implantable circuit.

21. An implantable circuit, comprising a low noise amplifier, the low noise amplifier comprising:

an operational transconductance amplifier (OTA) having a first reference input, a first reference output, a first input, and a first output;

a first resistor and a first capacitor connected between the first reference input of the OTA and the first reference output of the OTA; and

a second resistor and a second capacitor connected between the first input of the OTA and the first output of the OTA,

the OTA comprising:

a first branch series-connected transistor (SCT) connected to the first reference input of the OTA; and

a second branch SCT connected to the first input of the OTA,

the first branch SCT having at least two first branch transistors, and

the second branch SCT having at least two second branch transistors.

22. The implantable circuit according to claim 21 , wherein each first branch transistor comprises an input terminal that is directly connected to the input terminal of each other first branch transistor and directly connected to the first reference input of the OTA, and wherein each second branch transistor comprises an input terminal that is directly connected to the input terminal of each other second branch transistor and directly connected to the first input of the OTA.

23. The implantable circuit according to claim 22 , wherein the first branch transistors include a first PMOS first branch transistor and a second PMOS first branch transistor,

wherein a drain of the first PMOS first branch transistor is connected to a source of the second PMOS first branch transistor,

wherein a gate of the first PMOS first branch transistor and a gate of the second PMOS first branch transistor are directly connected to each other,

wherein the second branch transistors include a first PMOS second branch transistor and a second PMOS second branch transistor,

wherein a drain of the first PMOS second branch transistor is connected to a source of the second PMOS second branch transistor, and

wherein a gate of the first PMOS second branch transistor and a gate of the second PMOS second branch transistor are directly connected to each other.

Assignments (2)
CONFIRMATORY LICENSE Recorded Oct 19, 2016
From: FLORIDA INTERNATIONAL UNIVERSITY
To: NATIONAL INSTITUTES OF HEALTH (NIH), U.S. DEPT. OF HEALTH AND HUMAN SERVICES (DHHS), U.S. GOVERNMENT
Reel/Frame 040417/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2013
From: ZBRZESKI, ADELINE; JUNG, RANU
To: THE FLORIDA INTERNATIONAL UNIVERSITY BOARD OF TRUSTEES
Reel/Frame 030458/0808 →
Continuity (1)
Related Publication 20140330102A1 · Nov 6, 2014