Semiconductor light emitting device and method for manufacturing the same
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate.
1. A semiconductor light emitting device, comprising:
a substrate; and
a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer,
wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion,
wherein the first portion includes a first recess and the second portion includes a second recess,
wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate,
wherein the first recess and the second recess have a different depth from the bottom surface of the substrate,
wherein the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and
wherein the first recess and the second recess have a depth smaller than a thickness of the substrate.
2. The semiconductor light emitting device as claimed in claim 1 , wherein the first recess has a cross section of a polygonal shape or a hone-shape.
3. The semiconductor light emitting device as claimed in claim 1 , wherein the bottom surface of the substrate is formed in a flat surface between the first recess and the second recess.
4. The semiconductor light emitting device as claimed in claim 1 , wherein the first recess and the second recess are alternately formed.
5. The semiconductor light emitting device as claimed in claim 1 ,
wherein the second recess is formed as a plurality of second recesses adjacent to the first portion,
wherein a portion of the first recess is located at a center area of the plurality of second recesses, and
wherein the plurality of second recesses are spaced apart from each other.
6. The semiconductor light emitting device as claimed in claim 1 , wherein the first recess is disposed at a center area of the bottom surface of the substrate.
7. The semiconductor light emitting device as claimed in claim 6 , wherein the second portion is spaced apart from the center area of the bottom surface of the substrate.
8. The semiconductor light emitting device as claimed in claim 1 , wherein one of the first recess and the second recess has a depth of about 200 to 400 μm which is smaller than the thickness of the substrate.
9. The semiconductor light emitting device as claimed in claim 1 , wherein one of the first recess and the second recess has a depth of about 0.1 to 10 μm which is smaller than the thickness of the substrate.
10. The semiconductor light emitting device as claimed in claim 1 , wherein the first recess has a width of about 0.1 to 10 μm.
11. The semiconductor light emitting device as claimed in claim 1 , wherein the first recess has the depth deeper than that of the second recess.
12. The semiconductor light emitting device as claimed in claim 9 , wherein the substrate has a thickness of 80 μm or more.
13. The semiconductor light emitting device as claimed in claim 1 , wherein the substrate includes one of sapphire (Al 2 O 3 ), GaN, SiC, ZnO, GaP, GaAs and Si.
14. The semiconductor light emitting device as claimed in claim 1 , further comprising:
at least one of a buffer layer and an undoped semiconductor layer between the first conductive semiconductor layer and the substrate.
15. A semiconductor light emitting device, comprising:
a substrate;
a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer; and
a first semiconductor layer between the substrate and a bottom surface of the light emitting structure,
wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion,
wherein the first portion includes a first recess and the second portion includes a second recess,
wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate,
wherein the first recess and the second recess have a different depth from the bottom surface of the substrate,
wherein the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and
wherein the first recess and the second recess have a depth smaller than a thickness of the substrate.
16. The semiconductor light emitting device as claimed in claim 15 , wherein the first recess has a width different from a width of the second recess.
17. The semiconductor light emitting device as claimed in claim 15 , wherein the first recess has the depth deeper than that of the second recess.
18. The semiconductor light emitting device as claimed in claim 15 , wherein the second recess is adjacent to a sidewall of the substrate.
19. The semiconductor light emitting device as claimed in claim 15 , wherein the second recess is adjacent to a plurality of sidewalls of the substrate.