Display device and manufacturing method thereof

1. A display device, comprising:

a substrate including a plurality of pixel areas;

a thin film transistor disposed on the substrate;

a pixel electrode connected to the thin film transistor and disposed in a corresponding pixel area of the pixel areas;

a barrier layer disposed on the pixel electrode;

a roof layer disposed on the barrier layer and spaced apart from the barrier layer, wherein a microcavity is defined between the roof layer and the barrier layer; and

a liquid crystal disposed in the microcavity.

2. The display device of claim 1 , wherein

the barrier layer comprises silicon oxide.

3. The display device of claim 2 , wherein

the barrier layer functions as a lower alignment layer.

4. The display device of claim 3 , further comprising:

an upper alignment layer disposed between the roof layer and the barrier layer,

wherein the microcavity is defined between the upper alignment layer and the barrier layer, and

wherein the upper alignment layer comprises silicon oxide.

5. The display device of claim 4 , further comprising:

a lower insulating layer disposed between the upper alignment layer and the roof layer; and

an upper insulating layer disposed on the roof layer,

wherein each of the lower insulating layer and the upper insulating layer comprises silicon oxide.

6. The display device of claim 4 , further comprising:

a lower insulating layer disposed between the upper alignment layer and the roof layer; and

an upper insulating layer disposed on the roof layer,

wherein the lower insulating layer comprises silicon oxide, and

wherein the upper insulating layer comprises silicon nitride.

7. The display device of claim 2 , wherein

the barrier layer is disposed only in the pixel areas on the substrate, or disposed on substantially an entire of a surface of the substrate including the pixel areas.

8. The display device of claim 2 , further comprising:

a lower alignment layer disposed on the barrier layer; and

an upper alignment layer disposed below the roof layer and spaced apart from the lower alignment layer,

wherein the microcavity is defined between the upper alignment layer and the lower alignment layer.

9. The display device of claim 8 , wherein

each of the lower alignment layer and the upper alignment layer comprises an organic material.

10. The display device of claim 9 , further comprising:

a lower insulating layer disposed between the upper alignment layer and the roof layer; and

an upper insulating layer disposed on the roof layer,

wherein each of the lower insulating layer and the upper insulating layer comprises silicon oxide.

11. A manufacturing method of a display device, comprising:

providing a thin film transistor on a substrate including a pixel area;

providing a pixel electrode connected to the thin film transistor in the pixel area;

providing a barrier layer on the pixel electrode;

providing a sacrificial layer on the barrier layer;

providing a roof layer on the sacrificial layer;

forming an opening in the roof layer, wherein the opening exposes a portion of the sacrificial layer;

providing a microcavity between the pixel electrode and the roof layer by removing the sacrificial layer;

injecting a liquid crystal through the opening; and

providing an overcoat layer on the roof layer, wherein the overcoat layer seals the microcavity.

12. The manufacturing method of a display device of claim 11 , wherein

the providing the barrier layer comprises depositing silicon oxide on the substrate, on which the thin film transistor and the pixel electrode are provided.

13. The manufacturing method of a display device of claim 12 , wherein

the barrier layer functions as a lower alignment layer.

14. The manufacturing method of a display device of claim 13 , further comprising:

providing an upper alignment layer on the sacrificial layer by depositing silicon oxide after the providing the sacrificial layer.

15. The manufacturing method of a display device of claim 14 , further comprising:

providing a lower insulating layer on the upper alignment layer by depositing silicon oxide after the providing the upper alignment layer, and

providing an upper insulating layer on the roof layer by depositing silicon oxide after the providing the roof layer.

16. The manufacturing method of a display device of claim 14 , further comprising:

providing a lower insulating layer on the upper alignment layer by depositing silicon oxide after the providing the upper alignment layer, and

providing an upper insulating layer on the roof layer by depositing silicon nitride after the providing the roof layer.

17. The manufacturing method of a display device of claim 12 , wherein

the depositing the silicon oxide comprises:

depositing the silicon oxide on substantially an entire of a surface of the substrate; or

depositing the silicon oxide on substantially the entire of the surface of the substrate, and patterning the deposited silicon oxide such that the barrier layer is provided only in the pixel area.

18. The manufacturing method of a display device of claim 12 , further comprising:

providing a lower alignment layer on the barrier layer by injecting an aligning agent in the microcavity, and providing an upper alignment layer below the roof layer, after the providing the microcavity,

wherein the upper alignment layer is spaced apart from the lower alignment layer, and

the microcavity is defined between the upper alignment layer and the lower alignment layer.

19. The manufacturing method of a display device of claim 18 , wherein

the aligning agent comprises an organic material.

20. The manufacturing method of a display device of claim 19 , further comprising:

providing a lower insulating layer on the sacrificial layer by depositing silicon oxide after the providing the sacrificial layer, and

providing an upper insulating layer on the roof layer by depositing silicon oxide after the providing the roof layer.