IP Library Granted Patent US 9,412,480
Granted Patent B2
US 9,412,480 · App. 13/890,686 · Granted Aug 9, 2016

Diffraction leveraged modulation of X-ray pulses using MEMS-based X-ray optics

Inventors: Daniel Lopez (Chicago, IL); Gopal Shenoy (Naperville, IL); Jin Wang (Burr Ridge, IL); Donald A. Walko (Woodrige, IL); Il-Woong Jung (Woodridge, IL); Deepkishore Mukhopadhyay (Ventura, CA)
Assignee: uchicago Argonne, LLC
G21K1/06G21K2201/062
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Quick Facts
Patent No.
US 9,412,480
App. No.
13/890,686
Granted
Aug 9, 2016
Kind
B2
Abstract

A method and apparatus are provided for implementing Bragg-diffraction leveraged modulation of X-ray pulses using MicroElectroMechanical systems (MEMS) based diffractive optics. An oscillating crystalline MEMS device generates a controllable time-window for diffraction of the incident X-ray radiation. The Bragg-diffraction leveraged modulation of X-ray pulses includes isolating a particular pulse, spatially separating individual pulses, and spreading a single pulse from an X-ray pulse-train.

Claims (24)

1. A method for implementing Bragg-diffraction leveraged modulation of X-ray pulses using MicroElectroMechanical systems (MEMS) based diffractive optics comprising:

providing an oscillating crystalline MEMS device;

providing an incident pulse train of X-ray synchrotron radiation on the oscillating crystalline MEMS device; and

selecting pulses with Bragg-diffraction leveraged modulation of the incident pulse train of X-ray synchrotron radiation and generating a controllable time-window of the selected pulses-using the oscillating crystalline MEMS device and diffracting X-ray pulses during an oscillation cycle of the oscillating crystalline MEMS device when the incident pulse train of X-ray synchrotron radiation has an angle of incidence equal to a Bragg angle θ B for the oscillating crystalline MEMS device; a width of the controllable time-window determined by an angular velocity of the oscillating crystalline MEMS device; and

providing an angle of incidence equal to said Bragg angle θ B for the oscillating crystalline MEMS device for isolating the selected pulses, and angularly separating each of the selected pulses.

2. The method as recited in claim 1 , wherein providing incident X-ray radiation on the oscillating crystalline MEMS device includes providing X-ray pulses from a synchrotron radiation source.

3. The method as recited in claim 1 wherein providing an oscillating crystalline MEMS device includes providing a controllably oscillated crystalline MEMS device by providing a selected oscillation frequency.

4. The method as recited in claim 3 includes changing said controllable time-window of selected pulses by providing said selected oscillation frequency.

5. The method as recited in claim 3 wherein providing said selected oscillation frequency includes providing a pair of comb-drive actuators together with respective torsional flexures for driving an X-ray diffractive crystal.

6. The method as recited in claim 1 includes providing a selected oscillation frequency for the oscillating crystalline MEMS device for isolating the selected pulses, and angularly separating the selected pulses.

7. The method as recited in claim 1 includes providing an angle of incidence equal to a Bragg angle θ B for the oscillating crystalline MEMS device and providing a selected oscillation frequency for the oscillating crystalline MEMS device for separating a pulse from an X-ray pulse-train and diffracting X-ray pulses during said oscillation cycle of the oscillating crystalline MEMS device when the incident X-ray radiation has said angle of incidence equal to said Bragg angle θ B for the oscillating crystalline MEMS device.

8. The method as recited in claim 1 wherein providing said oscillating crystalline MEMS device includes fabricating said oscillating crystalline MEMS device using a Silicon-On-Insulator (SOI) wafer for providing a single-crystal-silicon, and removing a substrate beneath the single-crystal-silicon.

9. The method as recited in claim 8 wherein fabricating said oscillating crystalline MEMS device includes providing a pair of torsional flexures coupled to single-crystal-silicon and anchored to the substrate.

10. The method as recited in claim 9 includes providing a respective pair of comb-drive actuators coupled to the pair of torsional flexures.

11. The method as recited in claim 10 includes providing said comb-drive actuators with inter-digitated capacitors (IDCs).

12. An apparatus for implementing Bragg-diffraction leveraged modulation of X-ray pulses using MicroElectroMechanical systems (MEMS) based diffractive optics comprising:

an oscillating crystalline MEMS device;

an X-ray source providing an incident pulse train of X-ray synchrotron radiation on the oscillating crystalline MEMS device; and

said oscillating crystalline MEMS device selecting pulses with Bragg-diffraction leveraged modulation of the incident pulse train of X-ray synchrotron radiation and generating a controllable time-window of the selected pulses-and diffracting X-ray pulses during an oscillation cycle of the oscillating crystalline MEMS device when the incident pulse train of X-ray synchrotron radiation has an angle of incidence equal to a Bragg angle θ B for the oscillating crystalline MEMS device; a width of the controllable time-window determined by an angular velocity of the oscillating crystalline MEMS device; and

said oscillating crystalline MEMS device provides Bragg-diffraction leveraged modulation of X-ray pulses including isolating a pulse, and angularly separating individual pulses from an X-ray pulse-train and diffracting X-ray pulses during the oscillation cycle of the oscillating crystalline MEMS device when the incident X-ray radiation has said angle of incidence equal to said Bragg angle θ B for the oscillating crystalline MEMS device.

13. The apparatus as recited in claim 12 wherein said oscillating crystalline MEMS device includes a Silicon-On-Insulator (SOI) wafer including a single-crystal-silicon forming an X-ray diffractive crystal, a substrate being removed below the single-crystal-silicon.

14. The apparatus as recited in claim 13 wherein said oscillating crystalline MEMS device includes a respective pair of torsional flexures coupled to said single-crystal-silicon and said substrate.

15. The apparatus as recited in claim 14 wherein said oscillating crystalline MEMS device includes a respective pair of comb-drive actuators coupled to the pair of torsional flexures, said comb-drive actuators including inter-digitated capacitors (IDCs).

16. The apparatus as recited in claim 12 wherein said X-ray source includes a synchrotron radiation source providing X-ray pulses to said oscillating crystalline MEMS device.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2013
From: LOPEZ, DANIEL; SHENOY, GOPAL; WANG, JIN; WALKO, DONALD A.; JUNG, IL WOONG; MUKHOPADHYAY, DEEPKISHORE
To: UCHICAGO ARGONNE, LLC
Reel/Frame 031235/0060 →
CONFIRMATORY LICENSE Recorded Aug 16, 2013
From: UCHICAGO ARGONNE, LLC
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 031179/0461 →
Continuity (1)
Related Publication 20140334607A1 · Nov 13, 2014