Epoxy-amine underfill materials for semiconductor packages
Epoxy-amine underfill materials for semiconductor packages and semiconductor packages having an epoxy-amine underfill material are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon. A semiconductor package substrate has a surface with a plurality of contact pads thereon. A plurality of conductive contacts couples the surface of the semiconductor die to the surface of the semiconductor package substrate. An epoxy-amine underfill material is disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounds the plurality of conductive contacts. The epoxy-amine underfill has high adhesion and is based on a low volatility multi-functional amine species.
1. A semiconductor apparatus, comprising:
a semiconductor die having a surface with an integrated circuit thereon;
a semiconductor package substrate having a surface with a plurality of contact pads thereon;
a plurality of conductive contacts coupling the surface of the semiconductor die to the surface of the semiconductor package substrate; and
an epoxy-amine underfill material disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounding the plurality of conductive contacts, the epoxy-amine underfill having high adhesion and based on a low volatility multi-functional amine species, wherein the multi-functional amine species is an ortho-para-bisamine benzyl compound.
2. The semiconductor apparatus of claim 1 , wherein the ortho-para-bisamine benzyl compound comprises an organic moiety in each of the meta-positions.
3. The semiconductor apparatus of claim 1 , wherein the amine moieties of the ortho-para-bisamine benzyl compound are primary amine moieties.
4. The semiconductor apparatus of claim 1 , wherein the epoxy-amine underfill material is formed from a reaction between a bis-epoxide compound and the multi-functional amine species.
5. The semiconductor apparatus of claim 1 , wherein the epoxy-amine underfill material is adhered to the surface of the semiconductor die and to the surface of the semiconductor package substrate by an adhesion promoter.
6. A semiconductor package, comprising:
first and second adjacent semiconductor dies;
a silicon bridge structure electrically coupling the first and second semiconductor dies, and comprising a plurality of layers of conductive traces disposed above a substrate, a first pair of ground traces disposed in a first of the plurality of layers of conductive traces, a signal trace disposed in a second of the plurality of layers of conductive traces, below the first layer, and a second pair of ground traces disposed in a third of the plurality of layers of conductive traces, below the first layer;
a plurality of package routing layers, wherein the silicon bridge structure is disposed in one of the package routing layers, the first and second die are disposed on the plurality of package routing layers, and at least one of the first and second die is electrically coupled to the plurality of package routing layers; and
an epoxy-amine underfill material disposed between the silicon bridge and the first semiconductor die and between the silicon bridge and the second semiconductor die, the epoxy-amine underfill having high adhesion and based on a low volatility multi-functional amine species, wherein the multi-functional amine species is an ortho-para-bisamine benzyl compound.
7. The semiconductor package of claim 6 , wherein the ortho-para-bisamine benzyl compound comprises an organic moiety in each of the meta-positions.
8. The semiconductor package of claim 6 , wherein the amine moieties of the ortho-para-bisamine benzyl compound are primary amine moieties.
9. The semiconductor package of claim 6 , wherein the epoxy-amine underfill material is formed from a reaction between a bis-epoxide compound and the multi-functional amine species.
10. The semiconductor package of claim 6 , wherein the epoxy-amine underfill material is adhered to the silicon bridge, to the first semiconductor die, and to the second semiconductor die by an adhesion promoter.
11. A semiconductor package, comprising:
first and second adjacent semiconductor dies;
a silicon interposer structure disposed below and electrically coupling the first and second semiconductor dies, and comprising a plurality of layers of conductive traces disposed above a substrate, a first pair of ground traces disposed in a first of the plurality of layers of conductive traces, a signal trace disposed in a second of the plurality of layers of conductive traces, below the first layer, and a second pair of ground traces disposed in a third of the plurality of layers of conductive traces, below the first layer;
an organic package substrate disposed below and electrically coupled to the silicon interposer structure, the organic package substrate comprising a plurality of routing layers therein; and
an epoxy-amine underfill material disposed between the silicon interposer structure and the first semiconductor die, between the silicon interposer structure and the second semiconductor die, and between the silicon interposer structure and the organic package substrate, the epoxy-amine underfill having high adhesion and based on a low volatility multi-functional amine species, wherein the multi-functional amine species is an ortho-para-bisamine benzyl compound.
12. The semiconductor package of claim 11 , wherein the ortho-para-bisamine benzyl compound comprises an organic moiety in each of the meta-positions.
13. The semiconductor package of claim 11 , wherein the amine moieties of the ortho-para-bisamine benzyl compound are primary amine moieties.
14. The semiconductor package of claim 11 , wherein the epoxy-amine underfill material is formed from a reaction between a bis-epoxide compound and a multi-functional amine species.
15. The semiconductor package of claim 11 , wherein the epoxy-amine underfill material is adhered to the silicon interposer structure, to the first semiconductor die, to the second semiconductor die, and to the organic package substrate by an adhesion promoter.
16. The semiconductor package of claim 11 , wherein the organic package substrate is electrically coupled to the silicon interposer structure by one or more through-silicon-vias (TSVs) disposed in the silicon interposer structure.
17. A bumpless build-up layer (BBUL) semiconductor apparatus, comprising:
a semiconductor die having a backside and a device side;
a coreless substrate comprising a land side and a die side, wherein the semiconductor die is embedded in the coreless substrate, the backside of the semiconductor die facing the die side of the coreless substrate, and the device side of the semiconductor die facing the land side of the coreless substrate;
a foundation substrate;
an array of external conductive contacts disposed on the land side of the coreless substrate, electrically coupling the coreless substrate to the foundation substrate; and
an epoxy-amine underfill material disposed between the land side of the coreless substrate and the foundation substrate and surrounding the plurality of external conductive contacts, the epoxy-amine underfill having high adhesion and based on a low volatility multi-functional amine species, wherein the multi-functional amine species is an ortho-para-bisamine benzyl compound.
18. The BBUL semiconductor apparatus of claim 17 , wherein the ortho-para-bisamine benzyl compound comprises an organic moiety in each of the meta-positions.
19. The BBUL semiconductor apparatus of claim 17 , wherein the amine moieties of the ortho-para-bisamine benzyl compound are primary amine moieties.
20. The BBUL semiconductor apparatus of claim 17 , wherein the epoxy-amine underfill material is formed from a reaction between a bis-epoxide compound and the multi-functional amine species.
21. The BBUL semiconductor apparatus of claim 17 , wherein the epoxy-amine underfill material is adhered to the land side of the coreless substrate and to the foundation substrate by an adhesion promoter.
22. A bumpless build-up layer (BBUL) semiconductor apparatus, comprising:
a semiconductor die having a backside and a device side;
a coreless substrate comprising a land side and a die side, wherein the semiconductor die is embedded in the coreless substrate, the backside of the semiconductor die facing the die side of the coreless substrate, and the device side of the semiconductor die facing the land side of the coreless substrate;
a foundation substrate;
an array of external conductive contacts disposed on the land side of the coreless substrate, electrically coupling the coreless substrate to the foundation substrate; and
an epoxy-amine underfill material disposed between the land side of the coreless substrate and the foundation substrate and surrounding the plurality of external conductive contacts, the epoxy-amine underfill having high adhesion and based on a low volatility multi-functional amine species.
23. The BBUL semiconductor apparatus of claim 22 , wherein the multi-functional amine species is an ortho-para-bisamine benzyl compound, wherein the ortho-para-bisamine benzyl compound comprises an organic moiety in each of the meta-positions, and, wherein the amine moieties of the ortho-para-bisamine benzyl compound are primary amine moieties.
24. The BBUL semiconductor apparatus of claim 22 , wherein the epoxy-amine underfill material is formed from a reaction between a bis-epoxide compound and the multi-functional amine species.
25. The BBUL semiconductor apparatus of claim 22 , wherein the epoxy-amine underfill material is adhered to the land side of the coreless substrate and to the foundation substrate by an adhesion promoter.