IP Library › Granted Patent US 8,994,455
Granted Patent B2
US 8,994,455 · App. 13/892,072 · Granted Mar 31, 2015

Radio frequency amplifying apparatus having protection voltage varying function

Inventor: Youn Suk Kim (Gyunggi-do, KR)
Assignee: Samsung Electro-Mechanics Co., Ltd.
H03F1/52H03F3/19H03F3/21
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Quick Facts
Patent No.
US 8,994,455
App. No.
13/892,072
Granted
Mar 31, 2015
Kind
B2
Abstract

There is provided a radio frequency amplifying apparatus having a protection voltage varying function, including a radio frequency amplifying unit amplifying a radio frequency signal, and a protection circuit unit connected between an output node of the radio frequency amplifying unit and a ground and limiting a voltage in the output node to a level of a preset protection voltage or less when the voltage in the output node is higher than the preset protection voltage, wherein the protection voltage is varied with a control signal.

Claims (22)

1. A radio frequency amplifying apparatus comprising:

a radio frequency amplifying unit amplifying a radio frequency signal; and

a protection circuit unit connected between an output node of the radio frequency amplifying unit and a ground and limiting a voltage in the output node to a level of a preset protection voltage or less when the voltage in the output node is higher than the preset protection voltage,

wherein the protection voltage is varied with a control signal.

2. The radio frequency amplifying apparatus of claim 1 , wherein the protection voltage is determined according to a voltage generated by a parasitic inductor at the time of grounding the radio frequency amplifying unit and a peak voltage of an input signal.

3. The radio frequency amplifying apparatus of claim 1 , wherein the protection circuit unit includes first to n-th transistors connected to each other in series between the output node of the radio frequency amplifying unit and the ground,

the control signal includes first to n-th control signals for controlling the respective first to n-th transistors, and

the respective first to n-th transistors are turned on or turned off by the respective first to n-th control signals.

4. The radio frequency amplifying apparatus of claim 3 , wherein the protection voltage is determined according to the number of transistors in a turned-off state among the first to n-th transistors.

5. The radio frequency amplifying apparatus of claim 4 , wherein the number of transistors in the turned-off state among the first to n-th transistors is determined according to the voltage generated by the parasitic inductor at the time of grounding the radio frequency amplifying unit, the peak voltage of the input signal, and threshold voltages of the respective first to n-th transistors.

6. The radio frequency amplifying apparatus of claim 1 , wherein the radio frequency amplifying unit includes a power amplifier amplifying power of the radio frequency signal.

7. A radio frequency amplifying apparatus comprising:

a radio frequency amplifying unit amplifying a radio frequency signal;

a protection circuit unit connected between an output node of the radio frequency amplifying unit and a ground and limiting a voltage in the output node to a level of a preset protection voltage or less when the voltage in the output node is higher than the preset protection voltage; and

a controlling unit controlling the protection voltage using a control signal.

8. The radio frequency amplifying apparatus of claim 7 , wherein the protection voltage is determined according to a voltage generated by a parasitic inductor at the time of grounding the radio frequency amplifying unit and a peak voltage of an input signal.

9. The radio frequency amplifying apparatus of claim 7 , wherein the protection circuit unit includes first to n-th transistors connected to each other in series between the output node of the radio frequency amplifying unit and the ground,

the controlling unit generates the control signal including first to n-th control signals for controlling the respective first to n-th transistors, and

the respective first to n-th transistors are turned on or turned off by the respective first to n-th control signals.

10. The radio frequency amplifying apparatus of claim 9 , wherein the protection voltage is determined according to the number of transistors in a turned-off state among the first to n-th transistors.

11. The radio frequency amplifying apparatus of claim 10 , wherein the number of transistors in the turned-off state among the first to n-th transistors are determined according to the voltage generated by the parasitic inductor at the time of grounding the radio frequency amplifying unit, the peak voltage of the input signal, and threshold voltages of the respective first to n-th transistors.

12. The radio frequency amplifying apparatus of claim 7 , wherein the radio frequency amplifying unit includes a power amplifier amplifying power of the radio frequency signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2013
From: KIM, YOUN SUK
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 030397/0644 →
Priority Claims (1)
KR 10-2013-0017405 · Feb 19, 2013 · national
Continuity (1)
Related Publication 20140232471A1 · Aug 21, 2014