Bonded processed semiconductor structures and carriers

1. A semiconductor structure, comprising:

at least one bonded semiconductor structure including two or more processed semiconductor structures that are attached together; and

a temporary carrier die or wafer bonded to one processed semiconductor structure of the at least one bonded semiconductor structure, the temporary carrier die or wafer having a weakened zone comprising a plurality of implanted ions therein at an average depth of between 10 nm and 1000 nm from a surface of the temporary carrier die or wafer bonded to the one processed semiconductor structure of the at least one bonded semiconductor structure.

2. The semiconductor structure of claim 1 , wherein the two or more processed semiconductor structures are structurally and electrically coupled together at least partially by through wafer interconnects.

3. The semiconductor structure of claim 1 , wherein the two or more processed semiconductor structures are directly bonded together without using an adhesive material therebetween.

4. The semiconductor structure of claim 3 , wherein the temporary carrier die or wafer is directly bonded to the at least one bonded semiconductor structure.

5. The semiconductor structure of claim 1 , wherein the temporary carrier die or wafer is directly bonded to the at least one bonded semiconductor structure.

6. The semiconductor structure of claim 5 , wherein at least one of the two or more processed semiconductor structures comprises a substrate and a device region on the substrate, the device region including a plurality of device structures.

7. The semiconductor structure of claim 6 , wherein the substrate has a warp of less than about thirty micrometers (30 μm), a bow of less than about ten micrometers (10 μm), and a total thickness variation of less than about one micrometer (1 μm).

8. The semiconductor structure of claim 6 , wherein the plurality of device structures includes a plurality of through wafer interconnects extending through the device region and at least partially through the substrate.

9. The semiconductor structure of claim 8 , wherein at least one of the through wafer interconnects is exposed at a back surface of the substrate.

10. The semiconductor structure of claim 5 , further comprising a bonding material between the temporary carrier die or wafer and the at least one bonded semiconductor structure.

11. The semiconductor structure of claim 10 , wherein the bonding material comprises at least one of an oxide, a nitride, and an oxynitride.

12. The semiconductor structure of claim 11 , wherein the temporary carrier die or wafer comprises a silicon die or wafer.

13. The semiconductor structure of claim 1 , wherein the two or more processed semiconductor structures include a stack of processed semiconductor structures, each processed semiconductor structure comprising a die or wafer including at least a portion of an integrated circuit.

14. The semiconductor structure of claim 13 , wherein the processed semiconductor structures of the stack are bonded together using metal-to-metal bonds between active conductive features of the processed semiconductor structures.

15. The semiconductor structure of claim 13 , wherein the stack of processed semiconductor structures comprises at least one semiconductor die.

16. The semiconductor structure of claim 15 , wherein the stack of processed semiconductor structures comprises at least one semiconductor wafer.

17. The semiconductor structure of claim 15 , wherein the temporary carrier die or wafer is a temporary carrier die.

18. The semiconductor structure of claim 15 , wherein the temporary carrier die or wafer is a temporary carrier wafer.

19. The semiconductor structure of claim 13 , wherein the stack of processed semiconductor structures comprises at least one semiconductor wafer.

20. The semiconductor structure of claim 19 , wherein the temporary carrier die or wafer is a temporary carrier wafer.