Temperature sensor for a leadless cardiac pacemaker
A leadless cardiac pacemaker comprises a hermetic housing, a power source disposed in the housing, at least two electrodes supported by the housing, a semiconductor temperature sensor disposed in the housing, and a controller disposed in the housing and configured to deliver energy from the power source to the electrodes to stimulate the heart based upon temperature information from the temperature sensor. In some embodiments, the sensor can be configured to sense temperature information within a predetermined range of less than 20 degrees C. The temperature sensor can be disposed in the housing but not bonded to the housing.
1. A leadless cardiac pacemaker comprising:
a hermetic housing configured to be implanted in a chamber of a human heart;
a power source disposed in the housing;
at least two electrodes supported by the housing;
a semiconductor temperature sensor disposed in the housing, comprising:
at least one bipolar transistor configured to receive current from the power supply and based thereon generate base-emitter voltages that are used to derive a complimentary-to-absolute-temperature (CTAT) signal and first and second proportional-to-absolute-temperature (PTAT) signals, the first PTAT signal being equal to the CTAT signal at a first temperature, the second PTAT signal being equal to the CTAT signal at a second different temperature;
an analog-to-digital converter (ADC) configured to covert the CTAT signal and the first and second PTAT signals into a digital temperature output signal;
a controller disposed in the housing and configured to deliver energy from the power source to the electrodes to stimulate the heart based on the digital temperature output signal from the semiconductor temperature sensor.
2. The leadless cardiac pacemaker of claim 1 further comprising a fixation helix adapted to attach the hermetic housing to the heart.
3. The leadless cardiac pacemaker of claim 1 wherein the semiconductor temperature sensor is not bonded to the housing.
4. The leadless cardiac pacemaker of claim 1 , wherein the at least one bipolar transistor includes first and second bipolar transistors biased to different first and second current densities.
5. The leadless cardiac pacemaker of claim 1 , wherein the at least one bipolar transistor includes first and second bipolar transistors that have corresponding first and second base-emitter voltages, respectively, the first PTAP signal generated from a difference between the first and second base emitter voltages at the first temperature.
6. A leadless cardiac pacemaker comprising:
a hermetic housing configured to be implanted in a chamber of a human heart;
a switched-bias power source disposed in the housing;
at least two electrodes supported by the housing;
a semiconductor temperature sensor comprising:
at least one bipolar transistor configured to receive current the supply and based thereon generate base-emitter voltages that are used to derive a complimentary-to-absolute-temperature (CTAT) signal and first and second proportional-to-absolute-temperature (PTAT) signals, the first PTAT signal being generated by operating the at least one bipolar transistor at a first pair of current densities, the second different PTAT signal being generated by operating the at least one bipolar transistor at a second pair of current densities, wherein a first ratio of the first pair of current densities differs from a second ratio of the second pair of current densities;
an analog-to-digital converter (ADC) configured to covert the CTAT signal and the first and second PTAT signals into a digital temperature output signal; and
a controller disposed in the housing and configured to deliver energy from the power source to the electrodes to stimulate the heart based upon the digital temperature output signal from the semiconductor temperature sensor.
7. The leadless cardiac pacemaker of claim 6 further comprising a fixation helix adapted to attach the hermetic housing to the heart.
8. The leadless cardiac pacemaker of claim 6 wherein the semiconductor temperature sensor is not bonded to the housing.
9. The leadless cardiac pacemaker of claim 6 , wherein the at least one bipolar transistor includes first and second bipolar transistors biased to different first and second current densities.
10. The leadless cardiac pacemaker of claim 6 wherein the at least one bipolar transistor includes first and second bipolar transistors that have corresponding first and second base-emitter voltages, respectively, the first PTAP signal generated from a difference between the first and second base emitter voltages at the first temperature.