Method of processing a carrier with alignment marks

1. A method for processing a carrier, the method comprising:

forming at least two recess structures at least one of over and in the carrier, wherein each of the at least two recess structures comprises a plurality of recesses, wherein a first recess structure of the at least two recess structures comprises more recesses than a second recess structure of the at least two recess structures;

annealing the at least two recess structures such that at least two hollow chambers are formed by material of the at least one two recess structures, wherein the at least two hollow chambers comprise a first hollow chamber formed by the first recess structure and a second hollow chamber formed by the second recess structure, wherein the size of the first hollow chamber is greater than the size of the second hollow chamber, wherein the at least two hollow chambers form an optical alignment structure.

2. The method according to claim 1 ,

wherein the material of the at least two recess structures comprises silicon.

3. The method according to claim 1 ,

wherein forming the at least two recess structures comprises forming at least three recesses.

4. The method according to claim 1 ,

wherein each recess of the plurality of recesses has a shape of a right prism.

5. The method according to claim 1 ,

wherein each recess of the plurality of recesses has a shape selected from a group of shapes consisting of:

a hexagonal right prism;

an octagonal right prism; and

a cylinder.

6. The method according to claim 5 ,

wherein each recess is formed to have a width in a range from about 600 nm to about 900 nm.

7. The method according to claim 5 ,

wherein each recess is formed to have a depth in a range from about 0.5 μm to about 10 μm.

8. The method according to claim 1 ,

wherein a pitch between two adjacent recesses of the plurality of recesses is in a range from about 0.8 μm to about 1.5 μm.

9. The method according to claim 1 ,

wherein the at least two hollow chambers formed during the annealing process have a height in the range from about 0.1 μm to about 2 μm.

10. The method according to claim 1 ,

wherein the at least two hollow chambers formed during the annealing process have a width in the range from about 0.5 μm to about 10 μm.

11. The method according to claim 1 ,

wherein the at least two hollow chambers are formed by the annealing process at a temperature of at least about 900° C.

12. The method according to claim 1 ,

wherein the optical alignment structure is formed to be detectable by an infrared alignment tool using light with a wavelength in the range from about 1000 nm to about 1200 nm.

13. The method according to claim 1 ,

wherein the at least two hollow chambers are formed in a kerf region of a wafer.

14. The method according to claim 1 ,

wherein the carrier is a silicon wafer and the at least two hollow chambers are formed during the annealing process by silicon migration starting from the at least one two recess structures.

15. The method according to claim 1 ,

wherein forming at least two recess structures and annealing the at least two recess structures comprise forming a plurality of recess structures and annealing the plurality of recess structures such that a plurality of hollow chambers is formed by respective material of the plurality of recess structures, wherein the plurality of hollow chambers forms an optical alignment structure.

16. The method according to claim 15 ,

wherein each hollow chamber of the plurality of hollow chambers is respectively formed by a recess structure including at least three recesses.

17. The method according to claim 1 , further comprising,

depositing at least one epitaxial layer over the optical alignment structure.

18. The method according to claim 17 ,

wherein the at least one epitaxial layer has a layer thickness of at least 5 μm.