Patent Assignment
Reel/Frame 067699/0648
Change of Name
Recorded: 2024-06-12
Pages: 6
Assignor
INFINEON TECHNOLOGIES DRESDEN GMBH
Executed: 2018-10-29
Assignee
INFINEON TECHNOLOGIES DRESDEN GMBH & CO. KG
KÖNIGSBRÜCKERSTR. 180, DRESDEN, 01099, GERMANY
Covered Properties
(89)
Semiconductor Arrangement with Active Drift Zone
Circuit Arrangement with a Rectifier Circuit
Circuit Arrangement Having Semiconductor Switches
Integrated Circuit with at Least Two Switches
Circuit Arrangement Having a First Semiconductor Switch and a Second Semiconductor Switch
Circuit Arrangement with a Rectifier Circuit
Circuit Arrangement with a Rectifier Circuit
Semiconductor Device with an Insulating Structure for Insulating an Electrode from a Semiconductor Body
Lateral Semiconductor Device and Manufacturing Method Therefor
Semiconductor Device and Method for Manufacturing a Semiconductor Device
Patent:
8,598,655 →
Application:
13/566,742 →
Circuit Arrangement with a First Semiconductor Device and with a Plurality of Second Semiconductor Devices
Circuit Arrangement with a First Semiconductor Device and with a Plurality of Second Semiconductor Devices
Silicon Light Trap Devices, Systems and Methods
Apparatus, Storage Device, Switch and Methods, Which Include Microstructures Extending from a Support
Method for Manufacturing a Semiconductor Device
Methods for Manufacturing Semiconductor Devices
Semiconductor Packages and Methods of Fabrication Thereof
Semiconductor Packages and Methods of Fabrication Thereof
Chip and an Electronic Device
Method for Processing a Carrier, Method for Fabricating a Charge Storage Memory Cell, Method for Processing a Chip, and Method for Electrically Contacting a Spacer Structure
Semiconductor Arrangement with Active Drift Zone
Method for Processing a Carrier
Method for Processing a Carrier
Semiconductor Device and Method of Manufacturing a Semiconductor Device
Electrode, an Electronic Device, and a Method for Manufacturing an Optoelectronic Device
Electrode, an Electronic Device, and a Method for Manufacturing an Optoelectronic Device
A Method of Processing a Carrier with Alignment Marks
Semiconductor Light Trap Devices
Semiconductor Light Trap Device
Silicon Light Trap Devices
Method of Manufacturing a Semiconductor Device with Device Separation Structures
Semiconductor Device with Device Separation Structures
Semiconductor Device, a Micro-Electro-Mechanical Resonator and a Method for Manufacturing a Semiconductor Device
Power Transistor
Power Transistor
Method and Structure for Creating Cavities with Extreme Aspect Ratios
Method and Structure for Creating Cavities with Extreme Aspect Ratios
Wafer Arrangement, a Method for Testing a Wafer, and a Method for Processing a Wafer
Wafer Arrangement, a Method for Testing a Wafer, and a Method for Processing a Wafer
Optoelectronic Component and a Method for Manufacturing an Optoelectronic Component
Carrier and a Method for Processing a Carrier
Carrier and a Method for Processing a Carrier
Carrier with Hollow Chamber and Support Structure Therein
Carrier and a Method for Processing a Carrier
Semiconductor Device with Electrostatic Discharge Protection Structure
Wafer, a Method for Processing a Wafer, and a Method for Processing a Carrier
Bipolar Transistor Structure and a Method of Manufacturing a Bipolar Transistor Structure
Bipolar Transistor Structure and a Method of Manufacturing a Bipolar Transistor Structure
Micromechanical System and Method for Manufacturing a Micromechanical System
Method for Manufacturing a Micromechanical System
Imaging Device and a Method for Producing a Three-Dimensional Image of an Object
Sensor Structures, Systems and Methods with Improved Integration and Optimized Footprint
Semiconductor Device with Buried Doped Region and Contact Structure
Methods of Manufacturing a Semiconductor Device with a Buried Doped Region and a Contact Structure
Semiconductor Component with Field Electrode Between Adjacent Semiconductor Fins and Method for Producing Such a Semiconductor Component
Method for Manufacturing a Transistor
A Transistor Having a Monocrystalline Connection
Emitter and Method for Manufacturing the Same
Emitter and Method for Manufacturing the Same
Semiconductor Device Comprising Electrostatic Discharge Protection Structure
Particle Sensor and Method for Sensing Particles in a Fluid
Integrated Light Emitting Device, Integrated Sensor Device, and Manufacturing Method
Integrated Light Emitting Device, Integrated Sensor Device, and Manufacturing Method
Integrated Semiconductor Device and Manufacturing Method
Integrated Semiconductor Device and Manufacturing Method
Semiconductor Device Comprising a Transistor Cell Including a Source Contact in a Trench, Method for Manufacturing the Semiconductor Device and Integrated Circuit
Semiconductor Device Comprising a Transistor Cell Including a Source Contact in a Trench, Method for Manufacturing the Semiconductor Device and Integrated Circuit
Method of Manufacturing a Semiconductor Device
Electronic Switching and Reverse Polarity Protection Circuit
Method for Manufacturing a Semiconductor Device Having Silicide Layers
Semiconductor Device Having Silicide Layers
Accelerometer with Compatibility to Complementary Metal-Oxide-Semiconductor Technologies
Method for Manufacturing a Bipolar Junction Transistor
Method for Manufacturing a Bipolar Junction Transistor
Semiconductor Device
Forming a Microelectromechanical Systems (Mems) Device Using Silicon-on-Nothing and Epitaxy
Method for Manufacturing an Emitter for High-Speed Heterojunction Bipolar Transistors
Heterojunction Bipolar Transistor Fully Self-Aligned to Diffusion Region with Strongly Minimized Substrate Parasitics and Selective Pre-Structured Epitaxial Base Link
Stress Decoupled Piezoresistive Relative Pressure Sensor and Method for Manufacturing the Same
Pressure Sensor Device and Manufacturing Method
Forming an Offset in an Interdigitated Capacitor of a Microelectromechanical Systems (Mems) Device
Forming an Offset in an Interdigitated Capacitor of a Microelectromechanical Systems (Mems) Device
Method for Manufacturing a Bipolar Junction Transistor
Semiconductor Device Having an Electrostatic Discharge Protection Structure
Microelectromechanical Device and Method for Forming a Microelectromechanical Device Having a Support Structure Holding a Lamella Structure
Semiconductor Devices and Methods for Forming a Semiconductor Device
Microelectromechanical Device, Method for Manufacturing a Microelectromechanical Device, and Method for Manufacturing a System on Chip Using a Cmos Process
Power Semiconductor Device with dV/dt Controllability and Cross-Trench Arrangement
Micromechanical Sensor and Methods for Producing a Micromechanical Sensor and a Micromechanical Sensor Element
Related Assignments
(18)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jun 1, 2012
From: WEIS, ROLF; DEBOY, GERALD; TREU, MICHAEL; WILLMEROTH, ARMIN
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 028301/0625 →
Assignment of Assignor's Interest
Jul 31, 2012
From: WEIS, ROLF
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 028685/0734 →
Assignment of Assignor's Interest
Aug 8, 2012
From: WEIS, ROLF; DEBOY, GERALD
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 028751/0060 →
Assignment of Assignor's Interest
Aug 14, 2012
From: STRASSER, MARC; GEBHARDT, KARL-HEINZ; RUDOLF, RALF; O'RIAIN, LINCOLN
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 028782/0415 →
Assignment of Assignor's Interest
Oct 11, 2012
From: SCHLOESSER, TILL; WEIS, ROLF; RUDOLF, RALF
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 029109/0073 →
Assignment of Assignor's Interest
Oct 19, 2012
From: LEMKE, MARKO; TEGEN, STEFAN
To: INFINEON TECHNOLOGIES AG
Reel/Frame 029162/0796 →
Assignment of Assignor's Interest
Oct 22, 2012
From: WEIS, ROLF
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 029169/0584 →
Assignment of Assignor's Interest
Jul 1, 2013
From: DEBOY, GERALD; WEIS, ROLF
To: INFINEON TECHONOLOGIES DRESDEN GMBH
Reel/Frame 030717/0085 →
Assignment of Assignor's Interest
Jul 18, 2013
From: LEMKE, MARKO; TEGEN, STEFAN
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 030823/0272 →
Assignment of Assignor's Interest
Dec 23, 2013
From: SORSCHAG, KURT; SARLETTE, DANIEL; BRAUN, FELIX; HELLER, MARCEL
To: INFINEON TECHNOLOGIES AUSTRIA AG
Reel/Frame 031840/0514 →
Assignment of Assignor's Interest
Feb 25, 2014
From: INFINEON TECHNOLOGIES AUSTRIA AG
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 032332/0388 →
Assignment of Assignor's Interest
Oct 22, 2014
From: STRASSER, MARC; GEBHARDT, KARL-HEINZ; RUDOLF, RALF; O'RIAIN, LINCOLN
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 034008/0886 →
Assignment of Assignor's Interest
Mar 26, 2015
From: DEBOY, GERALD; WEIS, ROLF
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 035266/0476 →
Assignment of Assignor's Interest
Aug 5, 2016
From: INFINEON TECHNOLOGIES AUSTRIA AG
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 039599/0383 →
Assignment of Assignor's Interest
Aug 5, 2016
From: SORSCHAG, KURT; SARLETTE, DANIEL; BRAUN, FELIX; HELLER, MARCEL
To: INFINEON TECHNOLOGIES AUSTRIA AG
Reel/Frame 039355/0167 →
Assignment of Assignor's Interest
Mar 7, 2017
From: KAUTZSCH, THORALF
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 041487/0222 →
Assignment of Assignor's Interest
Dec 19, 2017
From: WEIS, ROLF
To: INFINEON TECHNOLOGIES DRESDEN GMBH
Reel/Frame 044439/0858 →
Assignment of Assignor's Interest
Apr 20, 2019
From: WEIS, ROLF
To: INFINEON TECHNOLOGIES DRESDEN GMBH & CO. KG
Reel/Frame 048951/0410 →