Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body
A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interface at least with a drift region of the device and having a first maximum vertical extension between the first horizontal interface and the electrode, and a field dielectric portion forming with the drift region second, third and fourth horizontal interfaces. The second through fourth horizontal interfaces are arranged below the main surface. The third horizontal interface is arranged between the second and fourth horizontal interfaces. A second maximum vertical extension is larger than the first maximum vertical extension and a third maximum vertical extension is larger than the second maximum vertical extension. The electrode only partially overlaps the third horizontal interface.
1. A semiconductor device, comprising:
a semiconductor body having a main surface with a normal direction defining a vertical direction, the semiconductor body comprising in a vertical cross-section:
a first contact region of a first conductivity type which extends to the main surface;
a body region of a second conductivity type which adjoins the first contact region and extends to the main surface;
a drift region of the first conductivity type which adjoins the body region and extends to the main surface; and
a second contact region which comprises a higher maximum doping concentration than the drift region and extends to the main surface;
an electrode arranged on the main surface; and
an insulating structure which insulates the electrode from the semiconductor body and comprises in the vertical cross-section:
a gate dielectric portion which forms a first horizontal interface at least with the drift region and has a first maximum vertical extension between the first horizontal interface and the electrode; and
a field dielectric portion which forms with the drift region a second horizontal interface, a third horizontal interface and a fourth horizontal interface, wherein the second horizontal interface, the third horizontal interface and the fourth horizontal interface are, in the vertical direction, arranged below the main surface, wherein the third horizontal interface is arranged between the second horizontal interface and the fourth horizontal interface, wherein a second maximum vertical extension of the field dielectric portion between the second horizontal interface and the electrode is larger than the first maximum vertical extension, wherein a third maximum vertical extension of the field dielectric portion between the third horizontal interface and the electrode is larger than the second maximum vertical extension, and wherein the electrode only partially overlaps the third horizontal interface.
2. The semiconductor device of claim 1 , wherein the gate dielectric portion adjoins the field dielectric portion.
3. The semiconductor device of claim 1 , wherein the electrode overlaps with the first contact region, the body region, the drift region, the gate dielectric portion, the first horizontal interface, the second horizontal interface and the third horizontal interface.
4. The semiconductor device of claim 1 , wherein the second contact region is of the first conductivity type and adjoins the field dielectric portion.
5. The semiconductor device of claim 1 , wherein the second horizontal interface, the third horizontal interface and the fourth horizontal interface are spaced apart from each other when seen from above.
6. The semiconductor device of claim 1 , wherein a horizontal extension of the second horizontal interface is smaller than a horizontal extension of the fourth horizontal interface.
7. The semiconductor device of claim 1 , wherein a horizontal extension of the second horizontal interface is smaller than a horizontal extension of the third horizontal interface and substantially equal to a horizontal extension of the fourth horizontal interface.
8. The semiconductor device of claim 1 , wherein the electrode is, in the vertical cross-section, substantially bar-shaped.
9. The semiconductor device of claim 1 , wherein a horizontal extension of the second horizontal interface is larger than a horizontal extension of the fourth horizontal interface.
10. The semiconductor device of claim 1 , wherein the semiconductor body further comprises a deep body region of the second conductivity type having a higher maximum doping concentration than the body region, adjoining the body region and arranged below the body region.