Semiconductor component with field electrode between adjacent semiconductor fins and method for producing such a semiconductor component
A semiconductor component includes semiconductor fins formed between a base plane and a main surface of a semiconductor body. Each semiconductor fin includes a source region formed between the main surface and a channel/body region, and a drift zone formed between the channel/body region and the base plane. The semiconductor component further includes gate electrode structures on two mutually opposite sides of each channel/body region, and a field electrode structure between mutually adjacent ones of the semiconductor fins. Each field electrode structure is separated from the drift zone by a field dielectric and extends from the main surface as far as the base plane. The gate electrode structures assigned to the mutually adjacent semiconductor fins enclose an upper portion of the corresponding field electrode structure from two sides.
1. A semiconductor component, comprising:
semiconductor fins formed between a base plane and a main surface of a semiconductor body, each semiconductor fin comprising a source region formed between the main surface and a channel/body region and a drift zone formed between the channel/body region and the base plane;
gate electrode structures on two mutually opposite sides of each channel/body region;
a field electrode structure between mutually adjacent ones of the semiconductor fins, each field electrode structure being separated from the drift zones by a field dielectric and extending from the main surface as far as the base plane, wherein the gate electrode structures assigned to the mutually adjacent semiconductor fins enclose an upper portion of the corresponding field electrode structure from at least two sides;
a buried connection layer having a net dopant concentration of at least 1E18 cm −3 between the base plane and a rear-side surface opposite the main surface; and
a transistor connection connected to the connection layer and comprising a contact or a highly doped column extending from the main surface as far as the connection layer.
2. The semiconductor component of claim 1 , wherein
the field electrode structures in each case extend at least over half of a distance between the channel/body region and the base plane.
3. The semiconductor component of claim 1 , wherein
upper portions of the semiconductor fins between the main surface and a transition between the channel/body regions and the drift zones are narrower than lower portions between the upper portions and the base plane.
4. The semiconductor component of claim 3 , wherein
sidewalls of the semiconductor fins at least in the upper portions are {111} crystal faces of a silicon crystal.
5. The semiconductor component of claim 1 , wherein
the semiconductor fins extend along a first lateral direction.
6. The semiconductor component of claim 1 , wherein
first semiconductor fins extend along a first lateral direction and second semiconductor fins extend along a second lateral direction, which intersects the first lateral direction, and in each case two first and two second semiconductor fins are connected at a fin node.
7. The semiconductor component of claim 1 , wherein
first semiconductor fins extend along a first lateral direction and second semiconductor fins extend along a second lateral direction, which intersects the first lateral direction, and in each case two first semiconductor fins and one second semiconductor fin are connected at a fin node.
8. The semiconductor component of claim 1 , further comprising: first contact structures which extend from the main surface as far as at least the source regions.
9. The semiconductor component of claim 1 , wherein
the field dielectric extends from the gate electrode structure as far as the base plane.
10. The semiconductor component of claim 1 , wherein
the gate electrode structures have a gate electrode and a gate dielectric separating the gate electrode from the respective channel/body region.