Method for manufacturing an emitter for high-speed heterojunction bipolar transistors
A method for manufacturing a bipolar junction transistor is provided. A layer stack is provided that comprises a semiconductor substrate having a trench isolation; an isolation layer arranged on the semiconductor substrate, wherein the first isolation layer comprises a recess forming an emitter window; lateral spacers arranged on sidewalls of the emitter window; a base layer arranged in the emitter window on the semiconductor substrate; and an emitter layer arranged on the isolation layer, the lateral spacers and the base layer. A sacrificial layer is provided on the emitter layer thereby overfilling a recess formed by the emitter layer due to the emitter window. The sacrificial layer is selectively removed up to the emitter layer while maintaining a part of the sacrificial layer filling the recess of the emitter layer. The emitter layer is selectively removed up to the isolation layer while maintaining the filled recess of the emitter layer.
1. A method for manufacturing a bipolar junction transistor, the method comprising:
providing a layer stack, the layer stack comprising:
a semiconductor substrate having a trench isolation;
an isolation layer arranged on the semiconductor substrate, wherein the isolation layer comprises a recess forming an emitter window;
lateral spacers arranged on sidewalls of the emitter window;
a base layer arranged in the emitter window on the semiconductor substrate; and
an emitter layer arranged on the isolation layer, the lateral spacers and the base layer;
providing a sacrificial layer on the emitter layer thereby overfilling a recess formed by the emitter layer due to the emitter window;
selectively removing the sacrificial layer up to the emitter layer while maintaining a part of the sacrificial layer filling the recess of the emitter layer; and
selectively removing the emitter layer up to the isolation layer while maintaining the filled recess of the emitter layer.
2. The method according to claim 1 , wherein providing the sacrificial layer comprises depositing the sacrificial layer on the emitter layer thereby overfilling a recess formed by the emitter layer due to the emitter window.
3. The method according to claim 2 , wherein the sacrificial layer is an oxide layer.
4. The method according to claim 1 , wherein selectively removing the sacrificial layer comprises planarizing the sacrificial layer up to the isolation layer while maintaining a part of the sacrificial layer filling the recess of the emitter layer.
5. The method according to claim 1 , wherein selectively removing the emitter layer comprises dry recessing the emitter layer up to the isolation layer while maintaining the filled recess of the emitter layer.
6. The method according to claim 1 , wherein the method comprises selectively removing the isolation layer and the part of the sacrificial layer filling the recess of the emitter layer.
7. The method according to claim 6 , wherein selectively removing the isolation layer and the part of the sacrificial layer filling the recess of the emitter layer comprises anisotropically etching the isolation layer and the part of the sacrificial layer filling the recess of the emitter layer.
8. The method according to claim 6 , wherein the method comprises structuring a base contact layer which is arranged on the semiconductor substrate, contacts the base layer and is exposed after removing the isolation layer.
9. The method according to claim 8 , wherein structuring the base contact layer comprises providing a protective layer on the base contact layer, the recess of the emitter layer and the lateral spacers; structuring the protective layer; and removing parts of the base contact layer that are not covered by the protective layer.
10. The method according to claim 8 , wherein the layer stack comprises an oxide layer arranged between the semiconductor substrate and the base contact layer.
11. The method according to claim 1 , wherein the isolation layer comprises an L-shape adjacent to the emitter window, such that part of the isolation layer adjacent to the semiconductor substrate protrudes between the lateral spacers and the base layer.
12. The method according to claim 11 , wherein selectively removing the isolation layer comprises selectively removing the isolation layer while maintaining the part of the isolation layer protruding between the lateral spacers and the base layer.