Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.
1. A bipolar transistor structure comprising:
a substrate;
a collector region in the substrate;
a base region disposed over the collector region;
an emitter region disposed over the base region; and
a base terminal laterally electrically contacting the base region, wherein the base terminal comprises polysilicon; and
a dielectric layer structure disposed between the substrate and the base terminal so that substantially all of a surface of the base terminal facing the substrate is disposed on the dielectric layer structure.
2. The bipolar transistor structure of claim 1 ,
wherein the substrate comprises a silicon.
3. The bipolar transistor structure of claim 1 ,
wherein the collector region and the emitter region comprise silicon doped with a first doping type, and
wherein the base region comprises silicon doped with a second doping type different from the first doping type.
4. The bipolar transistor structure of claim 3 ,
wherein the base terminal comprises silicon doped with the second doping type.
5. The bipolar transistor structure of claim 1 ,
wherein the base region comprises at least one material of the following group of materials, the group consisting of:
epitaxially grown silicon; and
an epitaxially grown silicon/germanium alloy.
6. The bipolar transistor structure of claim 1 , further comprising:
a dielectric isolation structure arranged in the substrate next to the collector region.