Wafer arrangement, a method for testing a wafer, and a method for processing a wafer

1. A method for processing a wafer, the method comprising:

providing a carrier, the carrier comprising a contact structure at a surface of the carrier, the contact structure being covered by an adhesive layer structure;

providing the wafer, the wafer comprising at least one electronic component having at least one electronic contact exposed on a surface of the wafer;

adhering the wafer on the carrier, wherein the at least one electronic contact of the wafer is aligned with the contact structure of the carrier and the at least one electronic contact is resiliently structurally-biased to remain in a non-contacted position with the contact structure of the carrier and is configured to be selectively displaced into a contacted position, wherein the at least one electronic contact of the wafer is further configured to revert to the non-contacted position after being selectively displaced; and

removing the wafer from the carrier via subjecting the adhesive layer structure to an electromagnetic radiation.

2. The method according to claim 1 ,

wherein the electromagnetic radiation is ultraviolet radiation.

3. The method according to claim 1 , further comprising:

cleaning the carrier after the wafer has been removed from the carrier to remove the adhesive layer structure from the carrier.

4. A method for processing a wafer, the method comprising:

providing a carrier, the carrier comprising a contact structure at a surface of the carrier, the contact structure being covered by an adhesive layer structure;

providing the wafer, the wafer comprising at least one electronic component having at least one electronic contact exposed on a surface of the wafer;

adhering the wafer on the carrier, wherein the at least one electronic contact of the wafer is aligned with the contact structure of the carrier and the at least one electronic contact is resiliently structurally-biased to remain in a non-contacted position with the contact structure of the carrier and is configured to be selectively displaced into a contacted position, wherein the at least one electronic contact of the wafer is further configured to revert to the non-contacted position after being selectively displaced; and

removing the wafer from the carrier via chemically influencing the adhesive layer structure.

5. The method according to claim 4 , further comprising:

thinning the wafer after the wafer has been adhered to the carrier.

6. The method according to claim 4 ,

wherein providing the carrier comprises covering the surface of the carrier and the contact structure of the carrier with an electrically insulating glue, the electrically insulating glue providing at least a part of the adhesive layer structure.

7. The method according to claim 4 ,

wherein providing the wafer comprises covering the surface of the wafer with an electrically insulating glue, the electrically insulating glue providing at least a part of the adhesive layer structure.

8. The method according to claim 4 , further comprising:

forming the at least one electronic component on the wafer prior to the surface of the wafer being adhered to the adhesive layer structure.

9. The method according to claim 4 , further comprising:

processing another surface of the wafer opposite to the surface of the wafer adhered to the adhesive layer structure.

10. The method according to claim 4 , further comprising:

subjecting at least a part of the wafer to a mechanical load to electrically connect the at least one electronic contact of the at least one electronic component to the contact structure of the carrier.

11. The method according to claim 10 , further comprising:

electrically testing the at least one electronic component of the wafer by providing at least one of an electrical current and an electrical voltage to the at least one electronic component via the contact structure of the carrier after subjecting the at least the part of the wafer to the mechanical load.

12. The method according to claim 10 , further comprising:

testing the at least one electronic component of the wafer by providing a test signal to the at least one electronic component via the contact structure of the carrier after subjecting the at least the part of the wafer to the mechanical load.

13. The method according to claim 12 , further comprising:

receiving a response test signal from the at least one electronic component after providing the test signal.

14. The method according to claim 10 , further comprising:

releasing the mechanical load to the part of the wafer to electrically disconnect the at least one electronic contact of the at least one electronic component from the contact structure of the carrier.

15. A method for processing a wafer, the method comprising:

providing a carrier, the carrier comprising a contact structure at a surface of the carrier, the contact structure being covered by an adhesive layer structure;

providing the wafer, the wafer comprising at least one electronic component having at least one electronic contact exposed on a surface of the wafer;

adhering the wafer on the carrier via the adhesive layer structure disposed over the at least one electronic contact, wherein the at least one electronic contact of the wafer is aligned with the contact structure of the carrier and the at least one electronic component is resiliently structurally-biased to remain in a non-contacted position with the contact structure of the carrier and is configured to be selectively displaced into a contacted position; and

wherein the adhesive layer structure is resiliently displaced in the contacted position and wherein the at least one electronic contact of the wafer is further configured to revert to the non-contacted position after being selectively displaced and the adhesive layer structure is further configured to revert position after the at least one electronic component is selectively displaced.

16. The method according to claim 15 , wherein the adhesive layer structure comprises an electrically insulating glue.