Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

1. A microelectromechanical systems (MEMS) device comprising:

bulk semiconductor substrate;

a cavity formed in the bulk semiconductor substrate;

a movably suspended mass defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;

a cap structure arranged on the main surface area of the bulk semiconductor substrate;

a first capacitive structure comprising:

a first electrode structure arranged on the movably suspended mass; and

a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate; and

spring elements connected to and between the movably suspended mass and the bulk semiconductor substrate such that the movably suspended mass is suspended from the bulk semiconductor substrate within the cavity via the spring elements,

wherein the spring elements comprise an electrical connection configured to electrically connect the first electrode structure to the bulk semiconductor substrate.

2. The MEMS device according to claim 1 , wherein the first electrode structure is laterally displaced with respect to the second electrode structure.

3. The MEMS device according to claim 1 , wherein:

the first electrode structure comprises an electrode structure material;

the bulk semiconductor substrate comprises a semiconductor substrate material; and

the electrode structure material comprises a material structure different from a material structure of the semiconductor substrate material.

4. The MEMS device according to claim 1 , wherein:

the first electrode structure comprises a first electrode structure material;

the second electrode structure comprises a second electrode structure material; and

the first electrode structure comprises a material structure different from a material structure of the second electrode structure material.

5. The MEMS device according to claim 1 , wherein:

the main surface area extends in a second direction orthogonal to the first direction,

the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction.

6. The MEMS device according to claim 1 , further comprising a second capacitive structure, comprising:

the first electrode structure arranged on the movably suspended mass; and

a third electrode structure arranged at the cap structure adjacent to the second electrode structure, wherein the first electrode structure and the third electrode structure are spaced apart in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

7. The MEMS device according to claim 6 , wherein:

the main surface area extends in a second direction orthogonal to the first direction,

the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction, and

the first electrode structure and the third electrode structure are offset from each other in the second direction such that the second portion of the first electrode overlaps with a first portion of the third electrode structure in the first direction, and a second portion of the third electrode structure does not overlap with the first electrode structure in the first direction.

8. The MEMS device according to claim 7 , wherein a read out circuit is connected to the first electrode structure to differentially sense a capacitance between the first electrode structure and the second electrode structure and a capacitance between the first electrode structure and the third electrode structure.

9. The MEMS device according to claim 6 , wherein the second electrode structure and the third electrode structure are spaced apart by a gap distance, wherein a width of the first electrode structure in a direction of movement of the movably suspended mass is greater than a sum of the gap distance and a maximum amplitude of the movement of the movably suspended mass.

10. The MEMS device according to claim 1 , wherein the movably suspended mass is configured to move in a direction parallel to the main surface area of the bulk semiconductor substrate.

11. The MEMS device according to claim 1 , wherein the first electrode structure and the second electrode structure are spaced apart by a distance of less than 500 nm.

12. The MEMS device according to claim 1 , wherein the cap structure is configured to seal the movably suspended mass, the first electrode structure, and the second electrode structure within an interior region defined between the cap structure and the bulk semiconductor substrate.

13. The MEMS device according to claim 1 , wherein the bulk semiconductor substrate, the movably suspended mass, and the spring elements form a unitary structure made of a semiconductor material.

14. The MEMS device according to claim 5 , wherein the cap structure is configured to seal the movably suspended mass, the first electrode structure, and the second electrode structure within an interior region defined between the cap structure and the bulk semiconductor substrate.

15. The MEMS device according to claim 6 , wherein the cap structure is configured to seal the movably suspended mass, the first electrode structure, the second electrode structure, and the third electrode structure within an interior region defined between the cap structure and the bulk semiconductor substrate.

16. The MEMS device according to claim 7 , wherein the cap structure is configured to seal the movably suspended mass, the first electrode structure, the second electrode structure, and the third electrode structure within an interior region defined between the cap structure and the bulk semiconductor substrate.

17. The MEMS device according to claim 7 , further comprising:

a fourth electrode structure arranged on the movably suspended mass, wherein the fourth electrode and the second portion of the third electrode structure are spaced apart and overlap in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

18. The MEMS device according to claim 17 , wherein the cap structure is configured to seal the movably suspended mass, the first electrode structure, the second electrode structure, the third electrode structure, and the fourth electrode structure within an interior region defined between the cap structure and the bulk semiconductor substrate.