Circuit arrangement with a first semiconductor device and with a plurality of second semiconductor devices

1. A circuit arrangement, comprising:

a first semiconductor device having a load path;

a plurality of second semiconductor devices, each second semiconductor device having a control terminal and a load path between a first load terminal and a second load terminal, the second semiconductor devices having their load paths connected in series and connected in series with the load path of the first semiconductor device, wherein a load terminal of a first one of the second semiconductor devices is connected to a first load terminal of an adjacent one of the second semiconductor devices; and

a voltage limiting element coupled between the control terminal of the first one of the second semiconductor devices and the second load terminal of the adjacent one of the second semiconductor devices, wherein the voltage limiting element comprises a normally-on transistor.

2. The circuit arrangement of claim 1 , wherein the normally-on transistor comprises one of a JFET, a depletion MOSFET, and a FINFET.

3. The circuit arrangement of claim 1 , wherein the normally-on transistor comprises one of a SiC JFET, a SiC depletion MOSFET, and a GaN HEMT.

4. The circuit arrangement of claim 1 , wherein the normally-on transistor comprises a load path connected between the control terminal of the first one of the second semiconductor devices and the second load terminal of the adjacent one of the second semiconductor devices, and a control terminal coupled to the first or second load terminals of the first one of the second semiconductor devices.

5. The circuit arrangement of claim 1 , wherein the voltage limiting element comprises a depletion MOSFET.

6. The circuit arrangement of claim 5 , wherein:

the second semiconductor devices comprise JFET transistors; and

the first semiconductor device comprises an enhancement MOSFET.

7. The circuit arrangement of claim 5 , wherein:

the second semiconductor devices comprise depletion MOSFET transistors; and

the first semiconductor device comprises an enhancement MOSFET.

8. The circuit arrangement of claim 1 , wherein the first semiconductor device comprises a depletion MOSFET.

9. The circuit arrangement of claim 1 , wherein the first semiconductor device comprises a diode.

10. The circuit arrangement of claim 1 , wherein the voltage limiting element is one of a plurality of voltage limiting elements, each voltage limiting element being coupled between the control terminal of one of the second semiconductor devices and the second load terminal of an adjacent one of the second semiconductor devices.

11. A circuit arrangement, comprising:

a first semiconductor device having a load path;

a plurality of second semiconductor devices, each second semiconductor device having a control terminal and a load path between a first load terminal and a second load terminal, the second semiconductor devices having their load paths connected in series and connected in series with the load path of the first semiconductor device, wherein a load terminal of a first one of the second semiconductor devices is connected to a first load terminal of an adjacent one of the second semiconductor devices; and

a voltage limiting element coupled between the control terminal of the first one of the second semiconductor devices and the second load terminal of the adjacent one of the second semiconductor devices, wherein the voltage limiting element comprises a depletion MOSFET.

12. The circuit arrangement of claim 11 , wherein:

the second semiconductor devices comprise JFET transistors; and

the first semiconductor device comprises an enhancement MOSFET.

13. The circuit arrangement of claim 11 , wherein:

the second semiconductor devices comprise depletion MOSFET transistors; and

the first semiconductor device comprises an enhancement MOSFET.