Silicon light trap devices
Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.
1. A device comprising:
a silicon structure having an exposed surface be exposed to light rays;
a photoelectrically active portion located beneath the exposed surface within the silicon structure; and
an internal structure located beneath the active portion, the internal structure having art interface surface generally parallel to the exposed surface at which total internal reflection of light rays occurs such that at least some of the light rays are redirected toward the photoelectrically active portion.
2. The device of claim 1 , wherein the exposed surface further comprises refractive facets that are angled relative to the interface surface so as to be non-parallel relative to the interface surface.
3. The device of claim 1 , wherein the internal structure comprises a cavity.
4. The device of claim 3 , wherein the cavity is defined, at least in part, by the interface surface and a second surface that is separated from and substantially parallel to the interface surface.
5. The device of claim 1 , further comprising a perimeter trench proximate a perimeter of the silicon structure having an internal interface surface that is oriented substantially perpendicular to the interface surface.
6. The device of claim 1 , further comprising scattering facets located within the silicon structure above or within the photoelectrically active portion, wherein the scattering facets redirect light rays by total internal reflection.
7. The device of claim 6 , wherein the scattering facets are farmed at the interfaces of cavities within the silicon structure and the cavities are adjacent one another and spaced from one another.
8. The device of claim 7 , wherein the cavities are substantially diamond shaped in cross section.
9. A device comprising:
a silicon structure having an exposed surface to be exposed to light rays, the surface having an exposed surface plane, the exposed surface defining refractive facets that are angled to be non-parallel to the surface plane;
a photoelectrically active portion located beneath the surface within the silicon structure; and
an internal structure located beneath the active portion, the internal structure having an interface surface, at least part of the interface surface being generally parallel to the exposed surface plane and at which total internal reflection of light rays occurs such that at least some of the light rays are redirected toward the photoelectrically active portion.
10. The device wherein the internal structure comprises cavity.
11. The device of claim 9 , wherein the cavity is defined, at least in part, by tip interface surface and a second surface that as separated from and substantially parallel to the interface surface.
12. The device of claim 9 , further comprising a perimeter trench proximate a perimeter of the silicon structure, the perimeter trench having an internal interface surface that is oriented substantially perpendicular to the exposed surface plane.
13. The device of claim 9 , wherein the refractive facets have a first long axis oriented generally parallel to each other and in a first direction and the internal structure further comprises a layer of adjacent tub each having a second long axis, the second long axis being substantially orthogonal to the first axis.
14. A device comprising:
a silicon structure having an exposed surface to be exposed to light rays;
a photoelectrically active portion located beneath the surface within the silicon structure;
an internal structure located beneath the photoelectrically active portion, the internal structure having at least one interface surface not parallel to the exposed surface at which total internal reflection of light rays occurs such that at least some light rays are redirected toward the photoelectrically active portion, toward the exposed surface or both; and
a perimeter structure located proximate a perimeter of the silicon structure and extending at least partially above the internal structure and below the exposed surface, the perimeter having an internally directed interface at which total internal reflection of at least some of the light rays occurs.
15. The device of claim 14 , wherein the perimeter structure is formed as a perimeter trench.
16. The device of claim 15 , wherein the perimeter trench has a width greater than approximately one wavelength of the light to be totally internally reflected and less than approximately four wavelengths of the light to be totally internally reflected.
17. The device of claim 15 , wherein the perimeter trench further comprises a conducting liner.
18. The device of claim 15 , wherein the perimeter trench further comprises an encapsulation at a top thereof.
19. The device of claim 14 , wherein the internal structure comprises a cavity defined by reflective facets oriented nonparallel to the exposed surface.
20. The device of claim 17 , wherein the conducting liner comprises a polysilicon liner.