Transistor having a monocrystalline connection

1. A transistor comprising:

a semiconductor substrate comprising a collector region extending from a main surface of the semiconductor substrate into a substrate material;

a base structure arranged at the collector region along a thickness direction parallel to a direction of a normal of the main surface of the semiconductor substrate;

an emitter structure arranged at the base structure averted from the semiconductor substrate and along the thickness direction; and

a doped electrode layer arranged at a lateral surface region of the base structure and along a lateral direction perpendicular to the thickness direction,

wherein the doped electrode layer and the base structure form a monocrystalline connection, and

wherein the base structure comprises a thickness along the thickness direction that is greater than a thickness of an insulator layer at least for a portion of the insulator layer arranged between the semiconductor substrate and the doped electrode layer.

2. The transistor of claim 1 , wherein the doped electrode layer is doped in a region thereof adjacent to the base structure.

3. The transistor of claim 1 , wherein the doped electrode layer comprises a boron doped silicon material.

4. The transistor of claim 1 , wherein the doped electrode layer is monocrystalline at a region adjacent to the base structure and amorphous or polycrystalline at a region spaced from the base structure.

5. The transistor of claim 1 , wherein the base structure comprises a silicon material and at least one of a germanium material, a boron material, or a carbon material.

6. The transistor of claim 1 , wherein the base structure comprises the thickness along the thickness direction of at least 30 nm and at most 60 nm.

7. The transistor of claim 1 , wherein an oxide layer comprises a thickness along the thickness direction of at least 15 nm and at most 200 nm.

8. A transistor comprising:

a semiconductor substrate comprising a collector region extending from a main surface of the semiconductor substrate into a substrate material;

a base structure arranged at the collector region along a thickness direction parallel to a direction of a normal of the main surface of the semiconductor substrate;

an emitter structure arranged at the base structure averted from the semiconductor substrate and along the thickness direction; and

a doped electrode layer arranged at a lateral surface region of the base structure and along a lateral direction perpendicular to the thickness direction,

wherein the doped electrode layer and the base structure form a monocrystalline connection, and

wherein a distance between the base structure and an electrode seed layer arranged between the semiconductor substrate and the doped electrode layer is at least 5 nm and at most 100 nm.

9. The transistor of claim 8 , wherein the doped electrode layer is polyscrystalline or amorphous at the electrode seed layer.

10. The transistor of claim 8 , wherein a thickness of the doped electrode layer along the thickness direction is higher than a corresponding thickness at regions where the electrode seed layer is arranged along the distance between the base structure and the electrode seed layer.

11. The transistor of claim 8 , wherein an electrode comprises the electrode seed layer and the doped electrode layer.

12. A transistor comprising:

a semiconductor substrate comprising a collector region extending from a main surface of the semiconductor substrate into a substrate material;

a base structure arranged at the collector region along a thickness direction parallel to a direction of a normal of the main surface of the semiconductor substrate;

an emitter structure arranged at the base structure averted from the semiconductor substrate and along the thickness direction; and

a doped electrode layer arranged at a lateral surface region of the base structure and along a lateral direction perpendicular to the thickness direction,

wherein the doped electrode layer and the base structure form a monocrystalline connection,

wherein the semiconductor substrate includes a plurality of trenches,

wherein the plurality of trenches are filled with an insulator layer, and

wherein the base structure has a thickness along the thickness direction that is greater than a thickness of the insulator layer at least for a portion of the insulator layer.

13. The transistor of claim 12 , wherein the portion is a part of the insulator layer arranged between the semiconductor substrate and the doped electrode layer.

14. The transistor of claim 1 , wherein the transistor is operable with frequencies higher than 500 Gigahertz.

15. The transistor of claim 14 , wherein the transistor is operable with frequencies higher than 700 Gigahertz.

16. The transistor according to claim 2 , wherein the doped electrode layer comprises a boron doped silicon material.

17. The transistor according to claim 2 , wherein the doped electrode layer is monocrystalline at a region.

18. The transistor of claim 8 , wherein the transistor is operable with frequencies higher than 500 Gigahertz.

19. The transistor of claim 8 , wherein the doped electrode layer comprises a boron doped silicon material.

20. The transistor of claim 8 , wherein the doped electrode layer is monocrystalline at a region adjacent to the base structure and amorphous or polycrystalline at a region spaced from the base structure.