Semiconductor device

1. A semiconductor device, comprising:

a semiconductor body having a first surface and a second surface opposite to the first surface;

a transistor structure in the semiconductor body;

a source contact structure overlapping the transistor structure and electrically connected to source regions of the transistor structure;

a gate contact structure having a part separated from the source contact structure by a longitudinal gap within a lateral plane;

gate interconnecting structures bridging the longitudinal gap and electrically coupled between the gate contact structure and a gate electrode of the transistor structure; and

electrostatic discharge protection structures bridging the longitudinal gap and electrically coupled between the gate contact structure and the source contact structure,

wherein at least one of the gate interconnecting structures is between two of the electrostatic discharge protection structures along a length direction of the longitudinal gap.

2. The semiconductor device of claim 1 , wherein the gate contact structure comprises a gate pad, and wherein the longitudinal gap is between a part of the gate pad and the source contact structure.

3. The semiconductor device of claim 1 , wherein the gate contact structure comprises a gate line, and wherein the longitudinal gap is between a part of the gate line and the source contact structure.

4. The semiconductor device of claim 3 , wherein the gate line at least partly surrounds the source contact structure within the lateral plane.

5. The semiconductor device of claim 1 , wherein the longitudinal gap is formed in an edge termination area.

6. The semiconductor device of claim 1 , wherein the source contact structure and the gate contact structure are patterned parts of a same conductive material.

7. The semiconductor device of claim 1 , wherein at least two gate interconnecting structures and at least three electrostatic discharge protection structures are arranged along the length direction of the longitudinal gap.

8. The semiconductor device of claim 1 , wherein an extension of each of the electrostatic discharge protection structures along the length direction of the longitudinal gap is less than 50 μm.

9. The semiconductor device of clam 1 , wherein edge portions of the gate interconnecting structures and edge portions of the electrostatic discharge protection structures are each arranged along a same line parallel to the length direction of the longitudinal gap.

10. The semiconductor device of claim 1 , wherein the gate interconnecting structures are formed as comb segments protruding from an electrode layer of the gate electrode in a lateral plane.

11. The semiconductor device of claim 1 , wherein the gate interconnecting structures comprise a polysilicon layer.

12. The semiconductor device of claim 1 , wherein the gate interconnecting structures and the electrostatic discharge protection structures are distinct parts of a same patterned polysilicon layer.

13. The semiconductor device of claim 1 , wherein the electrostatic discharge protection structures comprise at least one polysilicon diode.

14. The semiconductor device of claim 1 , wherein the electrostatic discharge protection structures comprise a polysilicon layer having first and second regions of opposite conductivity type alternatingly arranged along a lateral direction which is perpendicular to the length direction of the longitudinal gap.

15. The semiconductor device of claim 1 , further comprising a first isolation layer on the first surface of the semiconductor body, wherein the electrostatic discharge protection structures and the gate interconnecting structures abut the first isolation layer.

16. The semiconductor device of claim 15 , wherein the first isolation layer comprises a field dielectric layer.

17. The semiconductor device of claim 15 , further comprising a second isolation layer on the electrostatic discharge protection structures and the gate interconnecting structures, wherein the source contact structure and the gate contact structure are formed on the second isolation layer.

18. The semiconductor device of claim 15 , wherein first terminals of the electrostatic discharge protection structures and terminals of the gate interconnecting structures are electrically connected with the gate contact structure by first electric contact structures and second terminals of the electrostatic discharge protection structures are electrically connected with the source contact structure by second electric contact structures, the first and second electric contact structures extending along a vertical direction through the second isolation layer.

19. The semiconductor device of claim 1 , further comprising a transistor structure formed in an overlapping area of the gate contact structure and the second surface of the semiconductor body.

20. A semiconductor device, comprising:

a semiconductor body having a first surface and a second surface opposite to the first surface;

a transistor structure in the semiconductor body;

a source contact structure overlapping the transistor structure and electrically connected to source regions of the transistor structure;

a gate contact structure having a part separated from the source contact structure by a gap within a lateral plane;

gate interconnecting structures bridging the gap and electrically coupled between the gate contact structure and a gate electrode of the transistor structure; and

electrostatic discharge protection structures bridging the gap and electrically coupled between the gate contact structure and the source contact structure;

wherein the total number of the electrostatic discharge protection structures arranged along all longitudinal gaps between the gate contact structure and the source contact structure is equal to or higher than 3, and wherein the total number of the gate interconnecting structures arranged along all longitudinal gaps between the gate contact structure and the source contact structure is equal to or higher than 3.