Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin film transistor manufactured using the same
View Patent ↗An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).
1. An oxide semiconductor sputtering target which is used in a sputtering process for depositing an active layer of a thin-film transistor,
consisting essentially of indium (In), tin (Sn), gallium (Ga) and oxygen (O),
content ratios of the In, the Ga and the Sn being, by atomic percent, 60 to 70, 10 to 25 and 5 to 30 with respect to a total of In+Ga+Sn.
2. A method of manufacturing thin-film transistors,
comprising depositing an active layer using the oxide semiconductor sputtering target as recited in claim 1 .
3. The method of claim 2 , comprising annealing the active layer in a temperature ranging from 200 to 400° C. after depositing the active layer.
4. The method of claim 3 , comprising annealing the active layer in a temperature ranging from 250 to 350° C. after depositing the active layer.
5. The method of claim 2 , wherein the thin-film transistor is a thin-film transistor that is provided in a liquid crystal display or an organic light-emitting display.
6. A thin film transistor
comprising an active layer that consists essentially of indium (In), tin (Sn), gallium (Ga) and oxygen (O),
wherein the active layer has content ratios of the In, the Ga and the Sn, by atomic percent, 60 to 70, 10 to 25 and 5 to 30 with respect to a total of In+Ga+Sn.