Method of making a semiconductor device using spacers for source/drain confinement
View Patent ↗A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement.
1. A method of making a semiconductor device comprising:
forming a first spacer for at least one gate stack on a first semiconductor material layer;
forming a respective second spacer for each of source and drain regions in the first semiconductor layer and adjacent the at least one gate stack, each second spacer comprising a pair of opposing sidewalls and an end wall coupled thereto;
forming at least one fin for each pair of source and drain regions;
etching the at least one fin for each pair of source and drain regions to form source and drain recesses;
shaping the source and drain recesses to have an inclined extension adjacent the at least one gate stack; and
filling the source and drain recesses with a second semiconductor material while the first and second spacers provide confinement.
2. The method according to claim 1 , wherein the etching and filling are performed in a same processing chamber.
3. The method according to claim 1 , wherein the first and second spacers comprise a nitride.
4. The method according to claim 1 , wherein the first and second semiconductor materials are different semiconductor materials so that a stress is imparted to a channel region under the at least one gate stack.
5. The method according to claim 4 , wherein the first semiconductor material comprises silicon, and the second semiconductor material comprises silicon and germanium.
6. The method according to claim 1 , wherein the first semiconductor layer comprises a silicon on insulator (SOI) wafer.
7. A method of making a semiconductor device comprising:
forming a first nitride spacer for at least one gate stack on a first semiconductor material layer;
forming a respective second nitride spacer for each of source and drain regions in the first semiconductor layer and adjacent the at least one gate stack, each second nitride spacer comprising a pair of opposing sidewalls and an end wall coupled thereto;
forming at least one fin for each pair of source and drain regions;
etching the at least one fin for each pair of source and drain regions to form source and drain recesses;
shaping the source and drain recesses to have an inclined extension adjacent the at least one gate stack; and
filling the source and drain recesses with a second semiconductor material while the first and second nitride spacers provide confinement.
8. The method according to claim 7 , wherein the etching and filling are performed in a same processing chamber.