Methods for overlay improvement through feed forward correction

1. A method, comprising:

obtaining a device after at least one laser annealing process is completed, the device including a substrate surface and at least one layer over the substrate surface;

performing lithography on the at least one layer;

positioning a first contact-to-gate layer over the at least one layer;

checking alignment of electrical connections between the substrate surface and the first contact-to-gate layer;

determining if an overlay error is present;

adjusting at least one subsequent fabrication process;and

determining a rework threshold for use in adjusting the at least one subsequent fabrication process;

wherein the overlay error and the rework threshold are used to determine an overlay correction.

2. The method of claim 1 , wherein the overlay error is determined by measuring misalignment between the at least one layer and the first contact-to-gate layer.

3. The method of claim 2 , wherein the misalignment is measured along at least one of a first axis, a second axis and a third axis.

4. The method of claim 3 , wherein the first axis is a longitudinal axis.

5. The method of claim 4 , wherein the second axis is a lateral axis.

6. The method of claim 5 , wherein the third axis is a diagonal axis.

7. The method of claim 1 , wherein the at least one subsequent process is lithography.

8. The method of claim 1 , wherein the overlay correction is used to adjust the at least one subsequent fabrication process.

9. A process, comprising:

obtaining a device with a wafer and at least one layer on top of the wafer;

performing at least one laser annealing to the at least one layer;

applying a mask layer over the at least one layer;

performing lithography on the mask layer to form a contact layer;

arranging an overlay on top of the contact layer;

inspecting the alignment of the contact layer with the overlay;

determining an amount of overlay error by measuring a misalignment between two adjacent layers and wherein the two adjacent layers are the contact layer and the overlay;

determining a rework threshold from the overlay error;

calculating an overlay correction by measuring the misalignment along at least one of a longitudinal axis of the wafer, a lateral axis of the wafer, and a diagonal axis of the wafer; and

adjusting at least one subsequent process based on the overlay error and the overlay correction.

10. The process of claim 9 , wherein the at least one subsequent process is lithography.