Laser liftoff structure and related methods
Light-emitting devices, and related components, systems, and methods associated therewith are provided.
1. A method of making a light emitting device, the method comprising:
providing a first multi-layer stack, comprising:
a substrate,
a submount,
a high bandgap buffer region between the substrate and the submount, wherein the buffer region includes a dislocation reduction region, and
a sacrificial portion comprising a semiconductor material between the buffer region and the submount;
exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion, wherein the exposing comprises passing at least a portion of the electromagnetic radiation through at least part of the high bandgap buffer region, and the decomposing comprises forming a gas and a liquid; and
removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack,
wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation.
2. The method of claim 1 , wherein the electromagnetic radiation has a wavelength of smaller than 250 nm.
3. The method of claim 1 , wherein the buffer region further comprises an AlN layer.
4. The method of claim 1 , wherein the multilayer stack comprises a light generating region.
5. The method of claim 1 , wherein the substrate is formed of AlN.
6. A method of making a light emitting device, the method comprising:
providing a first multi-layer stack, comprising:
a substrate,
a submount,
a high bandgap buffer region comprising a dislocation reduction region between the substrate and the submount, and
a sacrificial portion comprising a semiconductor material between the buffer region and the submount;
exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion, wherein the exposing comprises passing at least a portion of the electromagnetic radiation through at least part of the high bandgap buffer region; and
removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack including an n-doped region having a thickness of less than 1000 nm at an upper surface of the multi-layer stack,
wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation.
7. The method of claim 6 , wherein the thickness of the n-doped region is less than 500 nm.
8. The method of claim 1 , wherein removing the substrate and at least part of the buffer region from the first multi-layer stack forms the second multi-layer stack and a third multi-layer stack.
9. The method of claim 6 , wherein removing the substrate and at least part of the buffer region from the first multi-layer stack forms the second multi-layer stack and a third multi-layer stack.