Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.
1. A method for manufacturing a semiconductor device, comprising:
stacking a first conductive layer having a light-transmitting property and a second conductive layer over a substrate having an insulating surface;
forming a first mask over the second conductive layer;
etching the first conductive layer to form a first electrode and a second electrode and etching the second conductive layer to form a third conductive layer, by using the first mask;
recessing the first mask to form a second mask;
etching the third conductive layer by using the second mask to form a first wiring;
forming a semiconductor layer that has a light-transmitting property and is electrically connected to the first electrode and the second electrode;
forming an insulating layer so as to cover the semiconductor layer;
stacking a fourth conductive layer having a light-transmitting property and a fifth conductive layer over the insulating layer;
forming a third mask over the fifth conductive layer;
etching the fourth conductive layer to form a third electrode and etching the fifth conductive layer to form a sixth conductive layer, by using the third mask;
recessing the third mask to form a fourth mask; and
etching the sixth conductive layer by using the fourth mask to form a second wiring.
2. A method for manufacturing a semiconductor device, comprising:
stacking a first conductive layer having a light-transmitting property and a second conductive layer over a substrate having an insulating surface;
forming a first mask over the second conductive layer;
etching the first conductive layer to form a first electrode and a second electrode and etching the second conductive layer to form a third conductive layer, by using the first mask;
recessing the first mask to form a second mask;
etching the third conductive layer by using the second mask to form a first wiring;
forming a semiconductor layer that has a light-transmitting property and is electrically connected to the first electrode and the second electrode;
forming an insulating layer so as to cover the semiconductor layer;
stacking a fourth conductive layer having a light-transmitting property and a fifth conductive layer over the insulating layer;
forming a third mask over the fifth conductive layer;
etching the fourth conductive layer to form a third electrode and etching the fifth conductive layer to form a sixth conductive layer, by using the third mask;
recessing the third mask to form a fourth mask; and
etching the sixth conductive layer by using the fourth mask to form a second wiring,
wherein the semiconductor layer comprises an oxide semiconductor containing indium, gallium, and zinc.
3. A method for manufacturing a display device comprising:
stacking a first conductive layer having a light-transmitting property and a second conductive layer over a substrate having an insulating surface;
forming a first mask over the second conductive layer;
etching the first conductive layer to form a first electrode and a second electrode and etching the second conductive layer to form a third conductive layer, by using the first mask;
recessing the first mask to form a second mask;
etching the third conductive layer by using the second mask to form a first wiring;
forming a semiconductor layer that has a light-transmitting property and is electrically connected to the first electrode and the second electrode;
forming an insulating layer so as to cover the semiconductor layer;
stacking a fourth conductive layer having a light-transmitting property and a fifth conductive layer over the insulating layer;
forming a third mask over the fifth conductive layer;
etching the fourth conductive layer to form a third electrode and etching the fifth conductive layer to form a sixth conductive layer, by using the third mask;
recessing the third mask to form a fourth mask; and
etching the sixth conductive layer by using the fourth mask to form a second wiring,
wherein the semiconductor layer comprises an oxide semiconductor.
4. A method for manufacturing the semiconductor device according to claim 3 ,
wherein the substrate is a glass, a quartz substrate, or a plastic substrate.
5. A method for manufacturing the semiconductor device according to claim 3 ,
wherein the substrate comprises synthetic resin.
6. A method for manufacturing the semiconductor device according to claim 3 ,
wherein each of the second conductive layer and the fifth conductive layer has a light-shielding property.
7. A method for manufacturing the semiconductor device according to claim 3 ,
wherein each of the first conductive layer and the fourth conductive layer is formed using any one of indium tin oxide, indium tin oxide containing silicon oxide, organoindium, organotin, zinc oxide, titanium nitride, indium zinc oxide containing zinc oxide, a material obtained by adding gallium to zinc oxide, tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, and indium tin oxide containing titanium oxide.
8. A method for manufacturing the semiconductor device according to claim 2 ,
wherein the substrate is a glass, a quartz substrate, or a plastic substrate.
9. A method for manufacturing the semiconductor device according to claim 2 ,
wherein the substrate comprises synthetic resin.
10. A method for manufacturing the semiconductor device according to claim 2 ,
wherein each of the second conductive layer and the fifth conductive layer has a light-shielding property.
11. A method for manufacturing the semiconductor device according to claim 2 ,
wherein each of the first conductive layer and the fourth conductive layer is formed using any one of indium tin oxide, indium tin oxide containing silicon oxide, organoindium, organotin, zinc oxide, titanium nitride, indium zinc oxide containing zinc oxide, a material obtained by adding gallium to zinc oxide, tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, and indium tin oxide containing titanium oxide.