IP Library Granted Patent US 9,136,165
Granted Patent B2
US 9,136,165 · App. 13/909,842 · Granted Sep 15, 2015

Methods for stiction reduction in MEMS sensors

Inventors: Cerina Zhang (Sunnyvale, CA); Nim Tea (Cupertino, CA)
Assignee: INVENSENSE, INC.
H01L21/76838H01L23/48
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Quick Facts
Patent No.
US 9,136,165
App. No.
13/909,842
Granted
Sep 15, 2015
Kind
B2
Abstract

A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.

Claims (16)

1. A MEMS device comprising:

a MEMS actuator;

a substrate opposing the MEMS actuator; and

a bump stop formed on the substrate to limit motion of the MEMS actuator,

wherein the bump stop is formed from a dielectric material and covered with a first conductive layer, a conductive path formed by the first conductive layer thereby substantially reducing electric charge collected on the bump stop.

2. The MEMS device of claim 1 , further comprising a second conductive layer between the substrate and the bump stop.

3. The MEMS device of claim 2 , wherein the second conductive layer is an electrode.

4. The MEMS device of claim 2 , wherein a portion of the second conductive layer is isolated.

5. The MEMS device of claim 2 , wherein a portion of the second conductive layer is isolated and a voltage potential is applied to the portion of the first conductive layer.

6. The MEMS device of claim 5 , where in the voltage potential is substantially the same as that of the MEMS actuator.

7. The MEMS device of claim 5 , where in the voltage potential has the same polarity as that of the MEMS actuator.

8. The MEMS device of claim 1 , wherein the first conductive layer has a rough surface to reduce contact area with the MEMS actuator.

9. The MEMS device of claim 1 , wherein the substrate is a semiconductor substrate.

10. The MEMS device of claim 1 , wherein the substrate includes electrical components.

11. The MEMS device of claim 1 , wherein the first conductive layer physically contacts the bump stop.

12. The MEMS device of claim 1 , wherein the bump stop is partially enclosed by the first conductive layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2013
From: ZHANG, CERINA; TEA, NIM
To: INVENSENSE, INC.
Reel/Frame 030544/0778 →
Continuity (1)
Related Publication 20140353774A1 · Dec 4, 2014