IP Library Patent Application 13912162
Patent Application
App. No. 13/912,162

Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

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Quick Facts
Patent No.
US None
App. No.
13/912,162
Abstract

A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

Claims (18)

1 . A photoconductive switch comprising:

a wide bandgap semiconductor material substrate; and

electrodes in contact with said substrate, wherein one of said electrodes has an aperture at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate.

2 . The photoconductive switch of claim 1 ,

wherein the electrode having the aperture includes a diffuser for dispersing said radiation into the triple junction region.

3 . The photoconductive switch of claim 1 ,

wherein the electrode not having the aperture is reflective at the electrode-substrate interface.

4 . The photoconductive switch of claim 1 ,

wherein the substrate has reflective surfaces to keep said radiation in the substrate.

5 . An optical transconductance varistor comprising:

a wide bandgap semiconductor material substrate, whose conduction response to changes in amplitude of incident radiation that is substantially linear throughout a non-saturation region thereof, whereby the substrate is operable in non-avalanche mode as a variable resistor; and

electrodes in contact with said material, wherein one of said electrodes has an aperture at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate.

6 . The optical transconductance varistor of claim 5 ,

wherein the electrode having the aperture has a diffuser for dispersing said radiation into the triple junction region.

7 . The optical transconductance varistor of claim 5 ,

wherein the electrode not having the aperture is reflective at the electrode-substrate interface.

8 . The optical transconductance varistor of claim 5 ,

wherein the substrate has reflective surfaces to keep said radiation in the substrate.