Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path
A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.
1 . A photoconductive switch comprising:
a wide bandgap semiconductor material substrate; and
electrodes in contact with said substrate, wherein one of said electrodes has an aperture at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate.
2 . The photoconductive switch of claim 1 ,
wherein the electrode having the aperture includes a diffuser for dispersing said radiation into the triple junction region.
3 . The photoconductive switch of claim 1 ,
wherein the electrode not having the aperture is reflective at the electrode-substrate interface.
4 . The photoconductive switch of claim 1 ,
wherein the substrate has reflective surfaces to keep said radiation in the substrate.
5 . An optical transconductance varistor comprising:
a wide bandgap semiconductor material substrate, whose conduction response to changes in amplitude of incident radiation that is substantially linear throughout a non-saturation region thereof, whereby the substrate is operable in non-avalanche mode as a variable resistor; and
electrodes in contact with said material, wherein one of said electrodes has an aperture at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate.
6 . The optical transconductance varistor of claim 5 ,
wherein the electrode having the aperture has a diffuser for dispersing said radiation into the triple junction region.
7 . The optical transconductance varistor of claim 5 ,
wherein the electrode not having the aperture is reflective at the electrode-substrate interface.
8 . The optical transconductance varistor of claim 5 ,
wherein the substrate has reflective surfaces to keep said radiation in the substrate.