Photovoltaic devices and method of making
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.
1. A photovoltaic device, comprising:
a layer stack; and
an absorber layer disposed on the layer stack, the absorber layer having a light incident side and a back side opposite the light incident side, wherein:
the absorber layer comprises cadmium, tellurium, and selenium;
an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer;
an average atomic concentration of selenium in the absorber layer is from about 0.001 atomic percent to about 20 atomic percent,
the atomic concentration of selenium is greater at the light incident side of the absorber layer than the atomic concentration of selenium at the back side of the absorber layer,
the absorber layer comprises a first region and a second region, the first region disposed proximate to the layer stack relative to the second region,
the first region of the absorber layer has a thickness between 200 nanometers to 1500 nanometers,
the second region of the absorber layer has a thickness between 200 nanometers to 1500 nanometers, and
a ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer is greater than 10.
2. The photovoltaic device of claim 1 , wherein the atomic concentration of selenium varies non-monotonically across the thickness of the absorber layer.
3. The photovoltaic device of claim 1 , wherein the atomic concentration of selenium in the absorber layer has a profile selected from an exponential profile, a top-hat profile, a step-change profile, a saw-tooth profile, a square-wave profile, a power law profile, or combinations thereof.
4. The photovoltaic device of claim 1 , wherein the first region has a band gap that is lower than a band gap of the second region.
5. The photovoltaic device of claim 1 , wherein the absorber layer further comprises sulfur, oxygen, copper, chlorine, or combinations thereof.
6. The photovoltaic device of claim 1 , wherein at least a portion of selenium is present in the absorber layer in the form of a ternary compound, a quaternary compound, or combinations thereof.
7. The photovoltaic device of claim 1 , wherein the absorber layer comprises a plurality of layers, and wherein the concentration of selenium varies across the plurality of layers.
8. The photovoltaic device of claim 1 , wherein the layer stack further comprises a buffer layer; and a window layer disposed between the buffer layer and the absorber layer.
9. The photovoltaic device of claim 8 , wherein the window layer comprises cadmium sulfide, oxygenated cadmium sulfide, zinc sulfide, cadmium zinc sulfide, cadmium selenide, indium selenide, indium sulfide, or combinations thereof.
10. The photovoltaic device of claim 1 , wherein the device is substantially free of a cadmium sulfide layer.
11. A method of making the photovoltaic device of claim 1 , comprising:
providing the absorber layer on the layer stack.
12. The method of claim 11 , wherein the atomic concentration of selenium varies non-monotonically across the thickness of the absorber layer.
13. The method of claim 11 , wherein the step of providing the absorber layer comprises contacting a semiconductor material with a selenium source.
14. The method of claim 13 , wherein the selenium source comprises elemental selenium, cadmium selenide, hydrogen selenide, organo-metallic selenium, or combinations thereof.
15. The method of claim 11 , wherein the step of providing the absorber layer comprises:
(a) disposing a selenium source layer on the layer stack;
(b) disposing the absorber layer on the selenium source layer; and
(c) introducing selenium from the selenium source layer into at least a portion of the absorber layer.
16. The method of claim 15 , wherein the selenium source layer has an average thickness in a range from about 1 nanometer to about 1000 nanometers.
17. The method of claim 11 , wherein the step of providing the absorber layer comprises co-depositing a selenium source material and a semiconductor material.
18. The method of claim 17 , wherein the selenium source material comprises elemental selenium, cadmium selenide, cadmium telluride selenide, or combinations thereof.
19. The photovoltaic device of claim 6 , wherein the at least a portion of selenium is present in the absorber layer in the form of ternary compound, CdSe x Te (1−x) , wherein x is from about 0.01 to about 0.99, and wherein the value of x varies across the thickness of the absorber layer.
20. The photovoltaic device of claim 1 , wherein the photovoltaic device is substantially free of a window layer heterojunction partner.
21. The photovoltaic device of claim 1 , wherein the layer stack comprises an interlayer comprising a metal species selected from magnesium, gadolinium, aluminum, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, and combinations thereof.