Photovoltaic device with transparent tunnel junction
A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of Cd y Zn (1-y) Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.
1. A photovoltaic device comprising:
a junction formed by a top cell, a bottom cell and a transparent tunnel junction between the first cell and second cell;
the top cell including:
a glass substrate;
a first transparent conductive oxide layer residing over the substrate;
a high-resistivity layer residing over the first transparent conductive oxide layer, the high-resistivity layer including:
a thickness of the high-resistivity layer having a range of 25 nm to 200 nm;
a n-type first window layer residing over the high-resistivity layer;
a p-type first absorber layer residing over the n-type first window layer;
the transparent tunnel junction including:
an interface layer doped p+ with a Group V dopant, the interface layer including:
zinc and tellurium;
a thickness having a range from 10 nm to 50 nm;
a charge carrier concentration 100 times or greater than a charge carrier concentration of the first absorber layer;
an electron reflector layer, the electron reflector layer including:
a thickness of the electron reflector layer having a range of 5 nm to 25 nm;
a transparent contact layer doped n+ residing over the interface layer, the transparent contact layer including:
a thickness of the transparent contact layer in a range from 20 nm to 1000 nm;
the bottom cell including:
a second transparent conductive oxide layer residing over the transparent contact layer;
a n-type second window layer residing over the second transparent conductive oxide layer;
a p-type second absorber layer residing over the second window layer, the p-type second absorber layer including:
a second bandgap that is lower than a first bandgap of the first absorber layer; and
a back contact layer residing over the second absorber layer.
2. The photovoltaic device of claim 1 , wherein the p-type first absorber layer is CdSe x Te (1-x) , and the amount of Se in the p-type first absorber layer graded through the thickness of the p-type first absorber layer and the x having a range of 0.15 to 0.40.
3. The photovoltaic device of claim 1 , further comprising an optical reflector layer between the transparent contact layer and the second transparent conductive oxide layer.
4. The photovoltaic device of claim 3 , wherein the optical reflector layer includes:
a first layer of gold, silver or aluminum; and
a thickness of the optical reflector layer having a range of 20 nm to 500 nm.
5. The photovoltaic device of claim 4 , wherein the optical reflector layer includes a second layer composed of a different material than the first layer.
6. The photovoltaic device of claim 1 , wherein the transparent contact layer includes zinc oxide.
7. The photovoltaic device of claim 6 , wherein the zinc oxide is doped with aluminum, indium, fluorine, or cadmium stannate.
8. The photovoltaic device of claim 7 , wherein the transparent contact layer is aluminum zinc oxide having an aluminum doping level in a range from 2 at. % to 8 at. %.
9. The photovoltaic device of claim 1 , wherein the transparent contact layer includes tin oxide.
10. The photovoltaic device of claim 9 , wherein the tin oxide is doped with aluminum, indium, fluorine, or cadmium stannate.
11. The photovoltaic device of claim 1 , wherein the high-resistivity layer is tin oxide, zinc tin oxide, zinc oxide, zinc oxysulfide or zinc magnesium.
12. The photovoltaic device of claim 1 , wherein the interface layer includes Cd y Zn (1-y) Te:D.
13. The photovoltaic device of claim 12 , wherein the Cd y Zn (1-y) Te:D interface layer is doped with copper, gold, silver, Group V material or a combination thereof.
14. The photovoltaic device of claim 13 , wherein the y of Cd y Zn (1-y) Te:D including a range from 0 to 90 at. %.
15. The photovoltaic device of claim 1 , wherein the p-type first absorber layer includes cadmium and tellurium.
16. The photovoltaic device of claim 1 , wherein the p-type first absorber layer includes cadmium, tellurium and selenium.
17. The photovoltaic device of claim 1 , wherein the p-type first absorber layer includes a thickness of the p-type first absorber layer in a range of 0.5 μm to 2.25 μm.
18. The photovoltaic device of claim 1 , wherein the first window layer is CdS, CdSSe, CdSe, ZnS, ZnSe, ZSnTe, Zns alloy, CdS alloy, ZnSO or cadmium magnesium sulfide.
19. The photovoltaic device of claim 1 , wherein the contact layer and the interface layer are substantially free of copper.
20. The photovoltaic device of claim 1 , wherein the contact layer and the interface layer are substantially free of graphite.
21. A photovoltaic device comprising:
a junction formed by a top cell, a bottom cell and a transparent tunnel junction between the first cell and second cell;
the top cell including:
a glass substrate;
a first transparent conductive oxide layer residing over the substrate;
a high-resistivity layer residing over the first transparent conductive oxide layer, the high-resistivity layer including:
a thickness of the high-resistivity layer having a range of 25 nm to 200 nm;
a top cell junction including:
a n-type first window layer residing over the high-resistivity layer;
a CdSe x Te (1-x) p-type first absorber layer residing over the n-type first window layer;
the transparent tunnel junction including:
a Cd y Zn (1-y) Te:D interface layer the interface layer including:
a dopant of copper, gold, silver, platinum palladium, rhodium, ruthenium, iridium, osmium or Group V material;
a thickness having a range from 10 nm to 50 nm;
a charge carrier concentration 100 times or greater than a charge carrier concentration of the first absorber layer;
an electron reflector layer, the electron reflector layer including:
a thickness of the electron reflector layer having a range of 5 nm to 25 nm;
a transparent contact layer doped n+residing over the interface layer, the transparent contact layer including:
tin oxide or zinc oxide;
a thickness of the transparent contact layer in a range from 20 nm to 1000 nm;
the bottom cell including:
a second transparent conductive oxide layer residing over the transparent contact layer;
an optical reflector layer between the transparent contact layer and the second transparent conductive oxide layer, the optical reflector layer including:
a thickness of the optical reflector layer having a range of 20 nm to 50 nm;
a first layer of gold, silver or aluminum;
a second layer composed of a different material than the first layer;
a bottom cell junction including:
a n-type second window layer residing over the second transparent conductive oxide layer;
a p-type second absorber layer residing over the second window layer, the p-type second absorber layer including:
a second bandgap that is lower than a first bandgap of the first absorber layer; and
a back contact layer residing over the second absorber layer.