Self-aligned wafer bonding
A wafer article includes a substrate, two or more hydrophilic areas disposed on the substrate, hydrophobic areas surrounding the hydrophilic areas, and a eutectic bonding material disposed on the substrate. A wafer apparatus including two wafers having complimentary hydrophilic regions and eutectic bonding material is disclosed and a method of forming a bonded wafer articles is disclosed.
1. A wafer apparatus comprising:
a first wafer comprising a first substrate and two or more first hydrophilic areas disposed on the first substrate, first hydrophobic areas surrounding the first hydrophilic areas, and a first eutectic bonding material disposed on the first substrate;
a second wafer comprising a second substrate and two or more second hydrophilic areas disposed on the second substrate, second hydrophobic areas surrounding the second hydrophilic areas, and a second eutectic bonding material disposed on the second substrate and bonded with the first eutectic bonding material, the first hydrophilic areas aligned with and facing the second hydrophilic areas.
2. A wafer apparatus according to claim 1 , further comprising a water droplet disposed on at least selected first hydrophilic areas.
3. A wafer apparatus according to claim 2 , wherein the water droplet contacts complimentary selected second hydrophilic areas and aligns the first hydrophilic areas with the second hydrophilic areas.
4. A wafer apparatus according to claim 3 , wherein the water droplet aligns the first hydrophilic areas with the second hydrophilic areas to within 100 nm or less.
5. A wafer apparatus according to claim 1 , wherein the first eutectic bonding material extends away from the first wafer and the second eutectic bonding material in disposed within a recess of the second wafer.
6. A wafer apparatus according to claim 5 , wherein the first eutectic bonding material extends into the recess of the second wafer.
7. A wafer apparatus according to claim 1 , wherein the eutectic bonding material is a metal alloy eutectic bonding material.
8. A wafer apparatus comprising:
a first wafer comprising a first substrate and two or more first hydrophilic areas disposed on the first substrate, first hydrophobic areas surrounding the first hydrophilic areas, and a first eutectic bonding material disposed on the first substrate;
a second wafer comprising a second substrate and two or more second hydrophilic areas disposed on the second substrate, second hydrophobic areas surrounding the second hydrophilic areas, and a second eutectic bonding material disposed on the second substrate, the first hydrophilic areas aligned with and facing the second hydrophilic areas.
9. A wafer apparatus according to claim 8 , further comprising a water droplet disposed on at least selected first hydrophilic areas.
10. A wafer apparatus according to claim 9 , wherein the water droplet contacts complimentary selected second hydrophilic areas and aligns the first hydrophilic areas with the second hydrophilic areas.
11. A wafer apparatus according to claim 10 , wherein the water droplet aligns the first hydrophilic areas with the second hydrophilic areas to within 100 nm or less.
12. A wafer apparatus according to claim 8 , wherein the first eutectic bonding material extends away from the first wafer and the second eutectic bonding material in disposed within a recess of the second wafer.
13. A wafer apparatus according to claim 12 , wherein the first eutectic bonding material extends into the recess of the second wafer.
14. A wafer apparatus according to claim 8 , wherein the eutectic bonding material is a metal alloy eutectic bonding material.