CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING WIRING
A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.
1 . A cleaning liquid for lithography comprising an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis.
2 . The cleaning liquid for lithography according to claim 1 , wherein the silicon compound is an alkoxysilane represented by the following formula (1) or a partial hydrolysis condensate thereof:
R 1 4-n SiOR 2 n (1)
wherein R 1 represents an organic group; R 2 represents an alkyl group having 1 to 4 carbon atoms; and n is an integer of 1 to 4.
3 . The cleaning liquid for lithography according to claim 1 , wherein the amount of the silicon compound is 5% by mass or less.
4 . The cleaning liquid for lithography according to claim 1 , wherein the alkali includes a quaternary ammonium hydroxide.
5 . The cleaning liquid for lithography according to claim 4 , wherein the quaternary ammonium hydroxide is a compound represented by the following general formula (2):
wherein R 3 to R 6 each independently represent an alkyl, aryl, aralkyl, or hydroxyalkyl group having 1 to 16 carbon atoms.
6 . The cleaning liquid for lithography according to claim 4 , wherein the amount of the quaternary ammonium hydroxide is 0.05 to 10% by mass.
7 . The cleaning liquid for lithography according to claim 4 , wherein the amount of the quaternary ammonium hydroxide is 0.1 to 5% by mass.
8 . The cleaning liquid for lithography according to claim 1 , wherein the alkali includes an alkanolamine.
9 . The cleaning liquid for lithography according to claim 8 , wherein the amount of the alkanolamine is 0.05 to 20% by mass.
10 . The cleaning liquid for lithography according to claim 8 , wherein the amount of the alkanolamine is 0.1 to 10% by mass.
11 . The cleaning liquid for lithography according to claim 1 , wherein the alkali includes a combination of a quaternary ammonium hydroxide and an inorganic base.
12 . The cleaning liquid for lithography according to claim 1 , wherein the acid includes hydrofluoric acid.
13 . The cleaning liquid for lithography according to claim 1 , wherein the amount of the acid is 1 ppm by mass to 10% by mass.
14 . The cleaning liquid for lithography according to claim 1 , wherein the amount of the acid is 100 ppm by mass to 5% by mass.
15 . The cleaning liquid for lithography according to claim 1 , wherein the solvent includes an organic solvent or a combination of an organic solvent and water.
16 . The cleaning liquid for lithography according to claim 1 , wherein the solvent consists of an organic solvent.
17 . The cleaning liquid for lithography according to claim 1 , wherein the amount of the solvent is 1 to 99.7% by mass.
18 . The cleaning liquid for lithography according to claim 1 , consisting essentially of the alkali or the acid, the solvent, the silicon compound, optionally an anticorrosive agent, and optionally a surfactant.
19 . The cleaning liquid for lithography according to claim 1 , which is used for cleaning a semiconductor multilayer laminate including a low dielectric constant layer.
20 . A method for forming a wiring which forms a metallic wiring layer by embedding a metal in an etching space that is formed in a low dielectric constant layer of a semiconductor multilayer laminate, comprising:
cleaning the semiconductor multilayer laminate using the cleaning liquid for lithography according to claim 1 , after formation of the etching space.