IP Library Granted Patent US 8,815,638
Granted Patent B2
US 8,815,638 · App. 13/915,681 · Granted Aug 26, 2014

Method of manufacturing thick-film electrode

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,815,638
App. No.
13/915,681
Granted
Aug 26, 2014
Kind
B2
Abstract

A method of manufacturing a thick-film electrode comprising the steps of: applying onto a substrate a conductive paste comprising a conductive powder, a glass frit, 3.5 to 12.5 weight percent of an organic polymer, and a solvent, wherein the weight percent is based on the total weight of the conductive powder, the glass frit, and the organic polymer; firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 1 to 10 μm; and soldering a wire to the thick-film electrode.

Claims (19)

1. A method of manufacturing a thick-film electrode comprising steps of:

applying onto a substrate a conductive paste comprising a conductive powder, a glass frit, an organic polymer, and a solvent, wherein the organic polymer is 3.5 to 12.5 weight percent (wt %) based on the weight of the conductive powder, the glass frit, and the organic polymer, and wherein the conductive powder is 31 to 65 wt %, the glass frit is 0.1 to 8 wt %, the organic polymer is 2 to 8 wt %, and the solvent is 31 to 61 wt %, based on the total weight of the conductive paste;

firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 1 to 10 μm; and

soldering, the thick-film electrode.

2. The method of claim 1 , wherein the conductive powder comprises a metal selected from the group consisting of silver (Ag), nickel (Ni), copper (Cu), gold (Au), platinum (Pt), palladium (Pd), aluminum (Al) and a mixture thereof.

3. The method of claim 1 , wherein the conductive powder is spherical powder.

4. The method of claim 1 , wherein particle diameter of the conductive powder is 0.5 to 5 μn.

5. The method of claim 1 , wherein the substrate is a semiconductor substrate.

6. The method of claim 5 , wherein the semiconductor substrate comprises a semiconductor layer and an insulating layer on at least one side surface of the semiconductor layer.

7. The method of claim 5 , wherein the thick-film electrode is a solar cell electrode.

8. A method of manufacturing a solar cell comprising steps of:

preparing a silicon wafer having a front side and a back side, wherein an insulating layer comprising silicon nitride (SiN x ), titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), or indium tin oxide (ITO) is formed on the front side,

applying onto at least either of the front side and the back side a conductive paste comprising a conductive powder, a glass frit, an organic polymer, and a solvent, wherein the organic polymer is 3.5 to 12.5 weight percent (wt %) based on the weight of the conductive powder, the glass fit, and the organic polymer, and wherein the conductive powder is 31 to 65 wt %, the glass frit is 0.1 to 8 wt %, the organic polymer is 2 to 8 wt %, and the solvent is 31 to 61 wt %, based on the total weight of the conductive paste;

firing the applied conductive paste to form the thick-film electrode as a bus electrode of the solar cell, wherein thickness of the thick-film electrode is 1 to 10 μm; and

soldering the thick-film electrode with a wire to electrically connect the solar cell to another solar cell.

9. A conductive paste to form a thick-film electrode with 1 to 10 μm thickness comprising a conductive powder, a glass frit, an organic polymer, and an solvent, wherein organic polymer is 15 to 12.5 weight percent (wt %) based on the weight of the conductive powder, the glass frit and the organic polymer, wherein the conductive powder is 31 to 65 wt %, the glass frit is 0.1 to 8 wt %, the organic polymer is 2 to 8 wt %, and the solvent is 31 to 61 wt %, based on the total weight of the conductive paste.

10. The method of claim 4 , wherein the particle diameter of the conductive powder is 0.9 to 1.9 μm.

11. The method of claim 8 , wherein particle diameter of the conductive powder is 0.9 to 1.9 μm.

12. The conductive paste of claim 9 , wherein particle diameter of the conductive powder is 0.9 to 1.9 μm.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2021
From: DUPONT ELECTRONICS, INC.
To: SOLAR PASTE, LLC
Reel/Frame 055766/0478 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2019
From: E. I. DU PONT DE NEMOURS AND COMPANY
To: DUPONT ELECTRONICS, INC.
Reel/Frame 049583/0269 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2013
From: OZAWA, KAZUTAKA
To: E. I. DU PONT DE NEMOURS AND COMPANY
Reel/Frame 030843/0961 →