IP Library Patent Application 13916315
Patent Application
App. No. 13/916,315

Superconductor Article with Directional Flux Pinning

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Quick Facts
Patent No.
US None
App. No.
13/916,315
Abstract

A method and composition for doped HTS tapes having directional flux pinning and critical current.

Claims (28)

1 . A superconducting tape structure comprising:

a substrate;

an overlying buffer; and

a superconductor, wherein the superconductor has a critical current retention factor greater than about 90% when a magnetic field of about 0.1 T is applied about parallel to the tape.

2 . The superconducting tape of claim 1 wherein the superconductor comprises at least one rare-earth metal chosen from the group consisting of Gd, Y, Sm, Nd, Eu, Dy, Ho, Er and Yb.

3 . The superconducting tape of claim 2 , wherein the superconductor comprises a ratio of at least 1.5 total rare-earth metals to at least 3 copper.

4 . The superconducting tape of claim 3 , wherein the rare-earth metals content comprises a combination of Sm and Y.

5 . The superconducting tape of claim 3 , wherein the rare-earth metals content comprises a combination of Gd and Y.

6 . The superconducting tape of claim 5 , further comprising a ratio of Gd to Y of about 1:1.

7 . The superconducting tape of claim 2 , comprising at least one dopant selected from the group consisting of Zr, Ta, Hf, Sn, Nb, Ti and Ce.

8 . The superconducting tape of claim 7 , wherein the superconductor comprises a dopant to copper ratio of at least about 0.05 dopant to at least about 3 copper.

9 . The superconducting tape of claim 7 , wherein the dopant comprises Zr.

10 . The superconducting tape of claim 1 , wherein the superconductor is a conductor formed by metal organic chemical vapor deposition fabrication.

11 . The superconducting tape of claim 1 , wherein the superconducting tape comprises a critical current retention factor greater than about 50% when a magnetic field of about 0.5 T is applied about parallel to the superconductor.

12 . The superconducting tape of claim 1 , wherein the superconducting tape comprises a critical current retention factor greater than about 30% when a magnetic field of about 1 T is applied about parallel to the superconducting tape.

13 . The superconducting tape of claim 12 , wherein the superconducting tape comprises a critical current retention factor greater than about 15% when a magnetic field of about 1 T is applied about perpendicular to the tape.

14 . A superconductor structure comprising:

a substrate;

an overlying buffer; and

a superconductor, wherein the superconductor has a critical current retention factor greater than about 50% when a magnetic field of about 0.5 T is applied about parallel to the superconductor.

15 . The superconductor structure of claim 14 , wherein the superconductor comprises at least one rare-earth metal chosen from the group consisting of Gd, Y, Sm, Nd, Eu, Dy, Ho, Er and Yb;

and wherein the superconductor comprises a ratio of total rare-earth metals content to copper content of at least 1.5 total rare-earth metals to at least 3 copper.

16 . The superconductor structure of claim 15 , wherein the rare-earth metals content comprises of a combination of Sm and Y or Gd and Y.

17 . The superconductor structure of claim 16 , wherein the ratio Gd and Y comprises a ratio of about 1 Gd to about 1Y.

18 . The superconductor structure of claim 14 , wherein the superconductor comprises at least one dopant selected from the group consisting of Zr, Ta, Hf, Sn, Nb, Ti and Ce; and wherein the dopant content to copper content ratio comprises at least about 0.05 dopant to at least about 3 copper.

19 . The superconductor structure of claim 18 , wherein the dopant comprises Zr.

20 . The superconductor structure of claim 14 , wherein the superconductor comprises a critical current retention factor greater than about 30% when a magnetic field of about 1 T is applied about parallel to the superconducting tape.

21 . The superconductor structure of claim 20 , wherein the superconductor comprises a critical current retention factor greater than about 15% when a magnetic field of about 1 T is applied about perpendicular to the tape.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2013
From: SELVAMANICKAM, VENKAT
To: UNIVERSITY OF HOUSTON SYSTEM
Reel/Frame 031566/0529 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2013
From: CHEN, YIMIN
To: SUPERPOWER, INC.
Reel/Frame 031566/0652 →