Ultrathin solid state dies and methods of manufacturing the same
Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.
1. A solid state transducer (SST) die, comprising:
a support structure comprising a structural material that has a low transmissiveness to radiation in a selected spectrum and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material;
a first contact in contact with the first semiconductor material;
a second contact in contact with the second semiconductor material, wherein both the first contact and the second contact are positioned to be connected to a power source from the same side of the SST die, and
an insulating material on the second semiconductor material, and the second contact, wherein the insulating material includes a plurality of channels extending therethrough;
wherein the SST structure is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening.
2. The SST die of claim 1 wherein the structural material is opaque.
3. The SST die of claim 1 wherein:
the SST structure further includes a plurality of emitters, the individual emitters having the first semiconductor material in common, wherein the individual emitters have a second semiconductor element spaced apart from the first semiconductor material, and an active element directly between the second semiconductor element and the first semiconductor material;
the support structure further includes a plurality of segments configured to form a plurality of openings that individually expose a portion of a surface of the first semiconductor material; and
the plurality of openings are superimposed with the plurality of emitters.
4. The SST die of claim 3 , further including:
a buffer material on a portion of the growth surface;
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact; and
a conductive material in direct contact with both the buffer material and the insulating material.
5. The SST die of claim 1 wherein:
the SST structure further includes a first side and a second side opposite the first side;
the support structure is at the first side of the SST structure;
the support structure has a thickness between about 20 microns and about 50 microns; and
the SST die further includes a conductive material, a portion of which is adjacent to the second side of the SST structure, wherein the portion of the conductive material adjacent to the second side has a thickness between about 10 microns and about 15 microns.
6. The SST die of claim 1 wherein the support structure comprises an engineered substrate.
7. The SST die of claim 6 wherein the growth substrate comprises silicon and the structural material comprises poly-aluminum nitride.
8. The SST die of claim 1 wherein the SST structure further includes at least a first emitter and a second emitter having the first semiconductor material in common, wherein each of the first and second emitters have a second semiconductor element spaced apart from the first semiconductor material and an active element directly between the second semiconductor element and the first semiconductor material, and wherein the SST die further includes:
a buffer material on a portion of the growth surface;
a first contact in contact with the first semiconductor material;
a second contact in contact with the second semiconductor element of the first emitter or the second semiconductor element of the second emitter;
an insulating material on the first contact, the first semiconductor material, the active elements of both the first and second emitters, the second semiconductor elements of both the first and second emitters, and the second contact; and
a conductive material in direct contact with both the buffer material and the insulating material.
9. The SST die of claim 1 , further including
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact.
10. The SST die of claim 1 , further including:
a buffer material on a portion of the growth surface;
a conductive material on the buffer material.
11. The SST die of claim 1 , further including:
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact; and
a conductive material on the insulating material.
12. The SST die of claim 1 wherein:
the SST structure further includes a plurality of emitters, the individual emitters having the first semiconductor material in common, wherein each of the emitters has a second semiconductor element spaced apart from the first semiconductor material and an active element directly between the second semiconductor element and the first semiconductor material; and
the support structure further includes a plurality of segments configured to form a plurality of openings that individually expose a portion of a surface of the first semiconductor material.
13. The SST die of claim 1 , further including:
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact, wherein the insulating material includes a plurality of channels extending therethrough.
14. The SST die of claim 1 , further including:
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact, wherein the insulating material includes:
a first channel extending through the insulating material to a back surface of the first contact, thereby exposing the back surface of the first contact through the insulating material, and
a second channel extending through the insulating material to a back surface of the second contact, thereby exposing the back surface of the second contact through the insulating material.
15. The SST die of claim 1 , further including:
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact, wherein the insulating material includes a plurality of channels extending therethrough; and
a conductive material on the insulating material and in at least some of the channels.
16. The SST die of claim 1 , further including:
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact, wherein the insulating material includes:
a first channel extending through the insulating material to a back surface of the first contact, thereby exposing the back surface of the first contact through the insulating material, and
a second channel extending through the insulating material to a back surface of the second contact, thereby exposing the back surface of the second contact through the insulating material; and
a conductive material on the insulating material and in the first and second channels such that the conductive material has a first portion in direct contact with the first contact and a second portion in direct contact with the second contact.
17. The SST die of claim 1 wherein:
the SST structure further includes at least a first emitter and a second emitter, and wherein the first and second emitters have the first semiconductor material in common, wherein the individual first and second emitters have a second semiconductor element spaced apart from the first semiconductor material, and an active element directly between the second semiconductor element and the first semiconductor material; and
wherein the first and second emitters are electrically isolated.
18. A solid state transducer (SST) die, comprising:
a support structure comprising a structural material that has a low transmissiveness to radiation in a selected spectrum and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material;
a first contact in contact with the first semiconductor material;
a second contact in contact with the second semiconductor material;
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact, wherein the insulating material includes a plurality of channels extending therethrough, and
wherein the SST structure is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening.
19. The SST of claim 18 , further comprising a conductive material on the insulating material.
20. A solid state transducer (SST) die, comprising:
a support structure comprising a structural material that has a low transmissiveness to radiation in a selected spectrum and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, an active region between the first semiconductor material and the second semiconductor material, and a plurality of emitters; and
an insulating material on the second semiconductor material and the plurality of emitters, wherein the insulating material includes a plurality of channels extending therethrough;
wherein the individual emitters have the first semiconductor material in common, and wherein each of the emitters has a second semiconductor element spaced apart from the first semiconductor material and an active element directly between the second semiconductor element and the first semiconductor material, and
wherein the support structure further includes a plurality of segments configured to form a plurality of openings that individually expose a portion of a surface of the first semiconductor material, and
wherein the SST structure is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening.