Data path integrity verification in memory devices
Methods and memories for verifying data path integrity are provided. In one such method, a first set of data are read from a first register of a memory device while a second set of data are written to an array of the memory device. The read first set of data and the data written to the first register are compared to verify data path integrity.
1. A method of verifying data path integrity in a memory device, comprising:
loading a first set of data from a data source external to the memory device into a first register of the memory device;
transferring the first set of data from the first register into a second register of the memory device;
clearing the first register;
loading a second set of data from the data source into the first register during programming of the first set of data from the second register to an array of memory cells of the memory device, the array of memory cells logically arranged in rows and columns;
reading the second set of data from the first register during programming of the first set of data to the array of memory cells from the second register and without previously transferring the second set of data from the second register into the first register; and
comparing the second set of data read from the first register to the second set of data from the data source;
wherein the first register is located in a data path between the array of memory cells and the data source.
2. The method of claim 1 , wherein verifying data path integrity is performed in a debug mode during an array operation of the memory device.
3. The method of claim 1 , and further comprising:
entering a debug mode prior to loading the first set of data.
4. The method of claim 3 , wherein commands for verifying data path integrity are available only in the debug mode.
5. The method of claim 3 , and further comprising exiting the debug mode after comparing the second set of data read from the first register to the second set of data from the data source.
6. The method of claim 1 , wherein verifying data path integrity is performed during a program operation.
7. The method of claim 1 , wherein the first register is a cache register and the second register is a page register.
8. A method of verifying data path integrity in a memory device, comprising:
reading a first set of data from a first register of the memory device while a second set of data is being written to an array of memory cells of the memory device from a second register of the memory device and without previously loading the first set of data into the first register from the second register, the array of memory cells logically arranged in rows and columns; and
comparing the read first set of data with data used in loading the first set of data to the first register and obtained from a source external to the memory device;
wherein the first register is located in a data path between the array of memory cells and the source of the data used in loading the first set of data to the first register.
9. The method of claim 8 , wherein writing the second set of data to the array of memory cells comprises:
loading the second set of data to the first register prior to loading the first set of data to the first register;
transferring the second set of data from the first register to the second register;
clearing the first register;
writing the second set of data to the array of memory cells from the second register; and
loading the first set of data to the first register while the second set of data is being written to the array of memory cells.
10. The method of claim 8 , wherein verifying data path integrity is performed in a debug mode during an array operation of the memory device.
11. The method of claim 8 , and further comprising:
entering a debug mode prior to loading the first set of data.
12. The method of claim 11 , wherein commands for verifying data path integrity are available only in the debug mode.
13. The method of claim 11 , and further comprising exiting the debug mode after comparing the read first set of data with the data used in loading the first set of data to the first register.
14. A memory device comprising:
an array of memory cells logically arranged in rows and columns; and
memory control circuitry configured to verify data path integrity in the memory device, the memory control circuitry configured to read a first set of data from a first register of the memory device while a second set of data is being written to the array of memory cells of the memory device from a second register of the memory device and without previously loading the first set of data into the first register from the second register, and to compare the read first set of data with data used in loading the first set of data to the first register and obtained from a source external to the memory device, wherein the first register is located in a data path between the array of memory cells and the source of the data used in loading the first set of data to the first register.
15. The memory device of claim 14 , wherein the memory control circuitry is further configured to write the second set of data to the array of memory cells by loading the second set of data to the first register prior to loading the first set of data to the first register, transferring the second set of data from the first register to the second register, clearing the first register, writing the second set of data to the array of memory cells from the second register, and loading the first set of data to the first register while writing the second set of data to the array of memory cells.
16. The memory device of claim 14 , wherein the memory control circuitry is further configured to verify data path integrity in a debug mode during an array operation of the memory device.
17. The memory device of claim 15 , wherein the data path comprises a physical connection between the second register and a plurality of input/output connections of the memory device.
18. The memory device of claim 15 , wherein the first register is operably connected to the array of memory cells, the second register is operably connected to the first register, and wherein the memory device further comprises:
a plurality of input/output connections; and
wherein the data path is connected between the second register and the plurality of input/output connection.
19. The memory device of claim 18 , wherein the memory control circuitry is further configured to write a set of test data to an unprogrammed portion of a partially full first register of the memory device while reading a third set of data from the array of memory cells of the memory device, to read the set of test data from the first register while reading the third set of data from the array of memory cells of the memory device, and to compare the read set of test data with the set of test data.