Methods of rejuvenating sputtering targets
View Patent ↗In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.
1. A method of rejuvenating a sputtering target, the method comprising:
providing a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure; and
spray-depositing a powder within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure,
wherein spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.
2. The method of claim 1 , wherein the sputtering target comprises a backing plate upon which the sputtering-target material is disposed.
3. The method of claim 2 , wherein the powder is spray deposited without removal of the backing plate from the sputtering-target material.
4. The method of claim 1 , wherein spray-depositing the powder comprises cold spray.
5. The method of claim 1 , wherein the metal comprises at least one of chromium, vanadium, magnesium, tin, lead, aluminum, zinc, copper, rhodium, silver, gold, cobalt, iron, ruthenium, rhenium, gallium, indium, or antimony.
6. The method of claim 1 , wherein the layer has a uniformly random texture.
7. The method of claim 1 , wherein the second grain size is less than 44 microns.
8. The method of claim 1 , wherein the second grain size is less than 10 microns.
9. The method of claim 1 , wherein the layer is substantially free of grain-size banding and texture banding.
10. The method of claim 1 , further comprising, after spray-depositing the powder, annealing the sputtering target.
11. The method of claim 1 , further comprising, after spray-depositing the powder, at least one of grinding or polishing a surface of the layer.
12. The method of claim 1 , wherein spray-depositing the powder comprises spray-depositing the powder only in the furrow.
13. The method of claim 1 , wherein spray-depositing the powder comprises spray-depositing the powder in the furrow and on the sputtering-target material outside of the furrow.
14. The method of claim 1 , wherein the sputtering-target material comprises regions of different preferred crystalline orientations, and the layer substantially lacks a preferred crystalline orientation.
15. The method of claim 1 , further comprising, after spray-depositing the powder, diffusion bonding the layer to the sputtering-target material.