Semiconductor devices including a first and second HFET and methods of manufacturing the same
Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second HFET. The second HFET may have different properties (characteristics) than the first HFET. One of the first and second HFETs may be of an n type, while the other thereof may be of a p type. The first and second HFETs may be high-electron-mobility transistors (HEMTs). One of the first and second HFETs may have normally-on properties, while the other thereof may have normally-off properties.
1. A semiconductor device comprising:
a first heterojunction field effect transistor (HFET) which includes a first channel layer and a first channel supply layer;
a second HFET which includes a second channel layer and a second channel supply layer, and has different properties than the first HFET; and
a substrate having a first surface that is opposite a second surface,
the first channel layer being between the first surface of the substrate and the first channel supply layer; and
the second channel layer being between the second surface of the substrate and the second channel supply layer.
2. The device of claim 1 , wherein the first HFET and the second HFET are electrically connected to each other.
3. The device of claim 1 , wherein
one of the first and second HFETs includes a 2-dimensional electron gas (2DEG), and
an other thereof includes a 2-dimensional hole gas (2DHG).
4. The device of claim 1 , wherein
the first HFET is an n-type HFET, and
the second HFET is a p-type HFET.
5. The device of claim 4 , wherein
a gate of the first HFET is connected to a gate of the second HFET, and
a drain of the first HFET is connected to a source of the second HFET.
6. The device of claim 4 , wherein
a gate of the first HFET is connected to a gate of the second HFET,
a source of the first HFET is connected to a source of the second HFET, and
a drain of the first HFET is connected to a drain of the second HFET.
7. The device of claim 1 , wherein the first HFET and the second HFET are each a high-electron-mobility transistor (HEMT).
8. The device of claim 7 , wherein
the first HFET is a normally-on HEMT, and
the second HFET is a normally-off HEMT.
9. The device of claim 8 , wherein the first HFET and the second HFET are connected in a cascode configuration.
10. The device of claim 9 , wherein a source of the first HFET is connected to a drain of the second HFET.
11. The device of claim 9 , wherein a gate of the first HFET is connected to a source of the second HFET.
12. The device of claim 1 , wherein at least a portion of the first HFET and at least a portion of the second HFET are connected to each other through the substrate by at least one conductive plug.
13. The device of claim 1 , wherein at least a portion of the first HFET and at least a portion of the second HFET are connected to each other by at least one bonding wire.
14. The device of claim 1 , wherein
a portion of the first HFET and a portion of the second HFET are connected to each other through the substrate by at least one conductive plug, and
an other portion of the first HFET and an other portion of the second HFET are connected to each other by at least one bonding wire.
15. The device of claim 1 , wherein at least one of the first HEFT and the second HFET includes a gallium nitride (GaN)-based material.
16. The device of claim 1 , wherein the substrate is one of a single substrate structure and a multi-substrate structure.
17. The device of claim 1 , wherein
the substrate includes a first substrate and a second substrate,
the second substrate is adhered to the first substrate,
a bottom surface of the first substrate is on one of the first HFET and the second HFET, and
an other of the first HFET and the second HFET is on a top surface of the second substrate.
18. A power device comprising:
the semiconductor device of claim 1 .
19. An inverter comprising:
the semiconductor device of claim 1 .
20. A method of manufacturing a semiconductor device, the method comprising:
forming a first HFET on a first surface of a substrate and a second HFET on a second surface of the substrate,
the first HEFT including a first channel layer and a first channel supply layer,
the first channel layer being between the first surface of the substrate and the first channel supply layer,
the second HFET including a second channel layer and a second channel supply layer,
the second channel layer being between the second surface of the substrate and the second channel supply layer,
the second surface being opposite the first surface of the substrate, and
the second HFET having different properties from the first HFET.
21. The method of claim 20 , further comprising:
forming a connection element configured to electrically connect the first HFET and the second HFET.
22. The method of claim 21 , wherein the forming the connection element comprises:
forming at least one hole through the substrate; and
forming a conductive plug in the hole.
23. The method of claim 21 , wherein the forming the connection element, comprises:
forming at least one bonding wire for connecting the first and second HFETs.
24. The method of claim 20 , wherein
one of the first HFET and the second HFET is an n-type HFET, and an other of the first HFET and the second HFET is a p-type HFET.
25. The method of claim 20 , wherein
one of the first HFET and the second HFET is a normally-on HEMT, and
an other of the first HFET and the second HFET is a normally-off HEMT.