IP Library Granted Patent US 9,718,950
Granted Patent B2
US 9,718,950 · App. 13/923,176 · Granted Aug 1, 2017

Directed self-assembly composition for pattern formation and pattern-forming method

Inventors: Shinya Minegishi (Tokyo, JP); Yuji Namie (Tokyo, JP); Tomoki Nagai (Tokyo, JP)
Assignee: JSR CORPORATION
C08L25/06B05D5/00C08L33/14C09D133/066C09D133/08C09D133/16G03F7/0002C08L33/16
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Quick Facts
Patent No.
US 9,718,950
App. No.
13/923,176
Granted
Aug 1, 2017
Kind
B2
Abstract

A directed self-assembly composition for pattern formation, includes two or more kinds of polymers. The two or more kinds of polymers each do not have a silicon atom in a main chain thereof. At least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom.

Claims (72)

1. A directed self-assembly composition, comprising:

two or more kinds of polymers each not having a silicon atom in a main chain thereof,

wherein at least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom, and the group is introduced by reacting a hetero-atom containing end processing agent with an active end of the main chain of the at least one of the two or more kinds of polymers,

wherein the two or more kinds of polymers comprise a styrene homopolymer and an acrylate ester copolymer,

wherein the group comprises —OH or —NR 2 , wherein each R independently represents a hydrogen atom, a halogen atom or a monovalent organic group having 1 to 30 carbon atoms, and

wherein the styrene homopolymer comprises the group.

2. The directed self-assembly composition according to claim 1 , wherein the group is represented by formula (1):

—R 1 —OH  (1)

wherein, in the formula (1), R 1 represents a divalent organic group having 1 to 30 carbon atoms.

3. The directed self-assembly composition according to claim 2 , wherein the group represented by the formula (1) is derived from an epoxy compound.

4. A pattern-forming method, comprising:

forming a directed self-assembled film having a phase separation structure which comprises a plurality of phases, using the directed self-assembly composition according to claim 1 ; and

removing a part of the plurality phases of the directed self-assembled film to form a pattern.

5. The pattern-forming method according to claim 4 , further comprising,

prior to forming the directed self-assembled film:

providing an underlayer film on a substrate; and

forming a prepattern on the underlayer film, and

after forming the directed self-assembled film:

removing the prepattern,

wherein in forming the directed self-assembled film, the directed self-assembled film is formed in a region on the underlayer film segregated by the prepattern.

6. The pattern-forming method according to claim 4 , wherein the pattern formed is a line-and-space pattern or a hole pattern.

7. A directed self-assembly composition, comprising:

two or more kinds of polymers each not having a silicon atom in a main chain thereof,

wherein at least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom, and the group is introduced by reacting a hetero-atom containing end processing agent with an active end of the main chain of the at least one of the two or more kinds of polymers,

wherein the two or more kinds of polymers comprise a styrene homopolymer and an acrylate ester copolymer,

wherein the hetero atom is a sulfur atom, a phosphorus atom, a silicon atom, a tin atom or a combination thereof, and

wherein the styrene homopolymer comprises the group.

8. A pattern-forming method, comprising:

forming a directed self-assembled film having a phase separation structure which comprises a plurality of phases, using the directed self-assembly composition according to claim 7 ; and

removing a part of the plurality phases of the directed self-assembled film to form a pattern.

9. The pattern-forming method according to claim 8 , further comprising,

prior to forming the directed self-assembled film:

providing an underlayer film on a substrate; and

forming a prepattern on the underlayer film, and

after forming the directed self-assembled film:

removing the prepattern,

wherein in forming the directed self-assembled film, the directed self-assembled film is formed in a region on the underlayer film segregated by the prepattern.

10. The pattern-forming method according to claim 8 , wherein the pattern formed is a line-and-space pattern or a hole pattern.

11. A directed self-assembly composition, comprising:

two or more kinds of polymers each not having a silicon atom in a main chain thereof,

wherein at least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having hetero atoms, and the group is introduced by reacting a hetero-atom containing end processing agent with an active end of the main chain of the at least one of the two or more kinds of polymers,

wherein the two or more kinds of polymers comprise a styrene homopolymer and an acrylate ester copolymer, and

wherein the hetero atoms are at least two atoms selected from the group consisting of an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, and a tin atom, and

wherein the styrene homopolymer comprises the group.

12. A pattern-forming method, comprising:

forming a directed self-assembled film having a phase separation structure which comprises a plurality of phases, using the directed self-assembly composition according to claim 11 ; and

removing a part of the plurality phases of the directed self-assembled film to form a pattern.

13. The pattern-forming method according to claim 12 , further comprising,

prior to forming the directed self-assembled film:

providing an underlayer film on a substrate; and

forming a prepattern on the underlayer film, and

after forming the directed self-assembled film:

removing the prepattern,

wherein in forming the directed self-assembled film, the directed self-assembled film is formed in a region on the underlayer film segregated by the prepattern.

14. The pattern-forming method according to claim 12 , wherein the pattern formed is a line-and-space pattern or a hole pattern.

15. A directed self-assembly composition, comprising:

two or more kinds of polymers each not having a silicon atom in a main chain thereof,

wherein at least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and represented by formula (1-16), formula (1-29) or formula (1-32), and the group is introduced by reacting a hetero-atom containing end processing agent with an active end of the main chain of the at least one of the two or more kinds of polymers:

wherein * denotes a binding site to the polymerizing end of the main chain of the polymer, and

wherein the two or more kinds of polymers comprise a styrene homopolymer and an acrylate ester copolymer, and

wherein the styrene homopolymer comprises the group.

16. A pattern-forming method, comprising:

forming a directed self-assembled film having a phase separation structure which comprises a plurality of phases, using the directed self-assembly composition according to claim 15 ; and

removing a part of the plurality phases of the directed self-assembled film to form a pattern.

17. The pattern-forming method according to claim 16 , further comprising,

prior to forming the directed self-assembled film:

providing an underlayer film on a substrate; and

forming a prepattern on the underlayer film, and

after forming the directed self-assembled film:

removing the prepattern,

wherein in forming the directed self-assembled film, the directed self-assembled film is formed in a region on the underlayer film segregated by the prepattern.

18. The pattern-forming method according to claim 16 , wherein the pattern formed is a line-and-space pattern or a hole pattern.

Assignments (3)
MERGER Recorded Mar 23, 2026
From: JSR CORPORATION
To: JICC-02, CO., LTD
Reel/Frame 075191/0149 →
CHANGE OF NAME Recorded Mar 23, 2026
From: JICC-02 CO., LTD
To: JSR CORPORATION
Reel/Frame 075192/0023 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2013
From: MINEGISHI, SHINYA; NAMIE, YUJI; NAGAI, TOMOKI
To: JSR CORPORATION
Reel/Frame 030655/0772 →
Priority Claims (1)
JP 2012-140124 · Jun 21, 2012 · national
Continuity (1)
Related Publication 20130344249A1 · Dec 26, 2013