Semiconductor device and method for manufacturing semiconductor device
In a top-gate transistor in which an oxide semiconductor film, a gate insulating film, a gate electrode layer, and a silicon nitride film are stacked in this order and the oxide semiconductor film includes a channel formation region, nitrogen is added to regions of part of the oxide semiconductor film and the regions become low-resistance regions by forming a silicon nitride film over and in contact with the oxide semiconductor film. A source and drain electrode layers are in contact with the low-resistance regions. A region of the oxide semiconductor film, which does not contact the silicon nitride film (that is, a region overlapping with the gate insulating film and the gate electrode layer) becomes the channel formation region.
1. A semiconductor device comprising:
an oxide semiconductor film;
a gate insulating film over the oxide semiconductor film;
a gate electrode layer over the gate insulating film;
a silicon nitride film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer, the silicon nitride film comprising a first opening; and
a first electrode layer over the silicon nitride film, the first electrode layer being in contact with the oxide semiconductor film through the first opening,
wherein in the silicon nitride film, a peak of the number of released hydrogen molecules does not appear at a temperature lower than or equal to 500° C. in thermal desorption spectroscopy.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises a crystal having a c-axis which is substantially perpendicular to a surface on which the oxide semiconductor film is formed.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises phosphorus or boron in a region which is in contact with the first electrode layer.
4. The semiconductor device according to claim 1 , further comprising a second electrode layer over the silicon nitride film,
wherein the silicon nitride film further comprises a second opening, and
wherein the second electrode layer is in contact with the oxide semiconductor film through the second opening.
5. A semiconductor device comprising:
an oxide semiconductor film;
a gate insulating film over the oxide semiconductor film;
a gate electrode layer over the gate insulating film;
a silicon nitride film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer, the silicon nitride film comprising a first opening; and
a first electrode layer over the silicon nitride film, the first electrode layer being in contact with the oxide semiconductor film through the first opening,
wherein in the silicon nitride film, the number of released hydrogen molecules is lower than or equal to 1.5×10 20 /cm 3 at a temperature lower than or equal to 550° C. in thermal desorption spectroscopy.
6. The semiconductor device according to claim 5 , wherein the oxide semiconductor film comprises a crystal having a c-axis which is substantially perpendicular to a surface on which the oxide semiconductor film is formed.
7. The semiconductor device according to claim 5 , wherein the oxide semiconductor film comprises phosphorus or boron in a region which is in contact with the first electrode layer.
8. The semiconductor device according to claim 5 , further comprising a second electrode layer over the silicon nitride film,
wherein the silicon nitride film further comprises a second opening, and
wherein the second electrode layer is in contact with the oxide semiconductor film through the second opening.
9. A semiconductor device comprising:
an oxide semiconductor film;
a gate insulating film over the oxide semiconductor film;
a gate electrode layer over the gate insulating film;
a silicon nitride film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer, the silicon nitride film comprising a first opening; and
a first electrode layer over the silicon nitride film, the first electrode layer being in contact with the oxide semiconductor film through the first opening,
wherein in the silicon nitride film, the number of released hydrogen molecules is higher than or equal to 1.0×10 20 /cm ' at a temperature higher than or equal to 500° C. in thermal desorption spectroscopy.
10. The semiconductor device according to claim 9 , wherein the oxide semiconductor film comprises a crystal having a c-axis which is substantially perpendicular to a surface on which the oxide semiconductor film is formed.
11. The semiconductor device according to claim 9 , wherein the oxide semiconductor film comprises phosphorus or boron in a region which is in contact with the first electrode layer.
12. The semiconductor device according to claim 9 , further comprising a second electrode layer over the silicon nitride film,
wherein the silicon nitride film further comprises a second opening, and
wherein the second electrode layer is in contact with the oxide semiconductor film through the second opening.