Adhesive composition for semiconductor and adhesive film comprising the same
An adhesive composition for a semiconductor has two exothermic peaks between 65° C. and 350° C. and has an area ratio of voids of less than 10%, measured after curing at 150° C. for 10 minutes and then at 150° C. for 30 minutes, and then molding at 175° C. for 60 seconds. A first exothermic peak appears between 65° C. and 185° C. and a second exothermic peak appears between 155° C. and 350° C.
1. An adhesive composition for a semiconductor, the adhesive composition having two exothermic peaks between 65° C. and 350° C. and having an area ratio of voids (Vm) of less than 10%, measured after 1-cycle curing at 150° C. for 30 minutes and then molding at 175° C. for 60 seconds,
wherein a first exothermic peak appears between 65° C. and 185° C. and a second exothermic peak appears between 155° C. and 350° C. with the proviso that the second exothermic peak appears at a higher temperature than the first exothermic peak,
wherein the adhesive composition includes a thermoplastic resin; an epoxy resin; a curing agent; and a curing accelerator, and
wherein the curing agent includes a phenolic curing agent and an amine curing agent.
2. The adhesive composition as claimed in claim 1 , wherein the phenolic and amine curing agents each have a different reaction temperature range.
3. The adhesive composition as claimed in claim 1 , wherein the phenolic curing agent is represented by Formula 1:
where R 1 and R 2 in Formula 1 each independently represent a C1 to C6 alkyl group, and n is from 2 to 100.
4. The adhesive composition as claimed in claim 1 , wherein the amine curing agent is represented by Formula 2:
wherein A in Formula 2 is a single bond or represents one selected from the group of —CH 2 —, —CH 2 CH 2 —, —SO 2 —, —NHCO—, —C(CH 3 ) 2 —, and —O—, and R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 and R 10 in Formula 2 each independently represent hydrogen, a C1 to C4 alkyl group, a C1 to C4 alkoxy group, or an amine group; here, at least two of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 and R 10 in Formula 2 include amine groups.
5. The adhesive composition as claimed in claim 1 , wherein a ratio of the phenolic curing agent to the amine curing agent is 3:1 to 1:11.
6. The adhesive composition as claimed in claim 1 , wherein the curing accelerator has a melting point of 100° C. to 160° C.
7. The adhesive composition as claimed in claim 1 , wherein the adhesive composition includes 15 to 70 wt % of the thermoplastic resin, 5 to 35 wt % of the epoxy resin, 0.5 to 15 wt % of the phenolic curing agent, 1 to 15 wt % of the amine curing agent, 0.01 to 10 wt % of the curing accelerator, 0 to 5 wt % of a silane coupling agent, and 10 to 60 wt % of fillers.
8. The adhesive composition as claimed in claim 1 , wherein:
an amount of the thermoplastic resin is greater than a total amount of the epoxy resin and the curing agent,
and
a ratio of the phenolic curing agent to the amine curing agent is 1:1 to 1:5.
9. The adhesive composition as claimed in claim 1 , wherein:
an amount of the thermoplastic resin is less than a total amount of the epoxy resin and the curing agent,
and
a ratio between a phenolic curing agent and an amine curing agent is 1:1 to 1:5.
10. The adhesive composition as claimed in claim 1 , wherein the adhesive composition has an area ratio of voids Vc of less than 15% after 1-cycle curing at 150° C. for 30 minutes.
11. An adhesive film for a semiconductor, the adhesive film including the adhesive composition as claimed in claim 1 .
12. A semiconductor device including the adhesive film as claimed in claim 11 .
13. An adhesive composition for a semiconductor, the adhesive composition having a compressive strength of 100 to 1,500 gf/mm 2 at 150° C. after curing at 125° C. for 30 minutes and an area ratio of voids (Vm) on an adherend of less than 10% after 1-cycle curing at 150° C. for 30 minutes and then EMC molding at 175° C. for 60 seconds.
14. The adhesive composition as claimed in claim 13 , wherein the adhesive composition has an area ratio of voids Vc of less than 15% after 1-cycle curing at 150° C. for 30 minutes.
15. An adhesive film for a semiconductor, the adhesive film comprising the adhesive composition as claimed in claim 13 .
16. An adhesive composition for a semiconductor, the adhesive composition having a compressive strength of 100 to 1,500 gf/mm 2 at 150° C. after curing at 125° C. for 30 minutes and an area ratio of voids (Vc) on an adherend of less than 15% after 1-cycle curing at 150° C. for 30 minutes.
17. An adhesive film for a semiconductor, the adhesive film comprising the adhesive composition as claimed in claim 16 .
18. A semiconductor device comprising the adhesive film as claimed in claim 17 .