Light-emitting device and method for fabricating the same
View Patent ↗To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to a backplane substrate provided with a transistor and a light-emitting element. The backplane substrate includes a separation layer and a buffer layer. A first substrate is separated from the backplane substrate by separation between the separation layer and the buffer layer. A flexible third substrate is bonded, using a second adhesive layer, to a surface of the buffer layer exposed by the separation. The support substrate is separated from the second substrate by separation between the second substrate and the adsorption layer.
1. A method for fabricating a light-emitting device, comprising:
a first step in which a backplane substrate is fabricated by forming a separation layer over a first substrate, forming a buffer layer over the separation layer, forming a plurality of transistors over the buffer layer, forming an insulating layer over the plurality of transistors, and forming a light-emitting element electrically connected to one of the plurality of transistors;
a second step in which an adsorption layer is formed over a support substrate and a second substrate with a thickness greater than or equal to 10 μm and less than or equal to 500 μm is formed in contact with the adsorption layer;
a third step in which the second substrate is coated with a first adhesive layer and the second substrate is bonded, using the first adhesive layer, to a surface of the backplane substrate over which the light-emitting element is formed;
a fourth step in which the first substrate is separated from the backplane substrate by separation between the separation layer and the buffer layer and a third substrate is bonded, using a second adhesive layer, to a surface of the buffer layer exposed by the separation; and
a fifth step in which the support substrate is separated from the second substrate by separation between the second substrate and the adsorption layer,
wherein the third step is performed after the first step and the second step, and then, the fourth step and the fifth step are performed.
2. The method for fabricating a light-emitting device according to claim 1 ,
wherein, in the second step, after the second substrate is attached to the support substrate, a touch sensor is formed over the second substrate, a second insulating layer is formed over the touch sensor, and a coloring layer is formed over the second insulating layer.
3. The method for fabricating a light-emitting device according to claim 1 ,
wherein the separation layer contains at least one of tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, and silicon.
4. The method for fabricating a light-emitting device according to claim 1 ,
wherein the separation layer contains tungsten.
5. The method for fabricating a light-emitting device according to claim 1 ,
wherein the buffer layer is a silicon oxide layer, a gallium oxide layer, a hafnium oxide layer, an yttrium oxide layer, an aluminum oxide layer, a silicon nitride layer, an aluminum nitride layer, a silicon oxynitride layer, an aluminum oxynitride layer, or a silicon nitride oxide layer.
6. The method for fabricating a light-emitting device according to claim 1 ,
wherein the first adhesive layer is an epoxy resin layer, an acrylic resin layer, or an imide resin layer.
7. The method for fabricating a light-emitting device according to claim 1 ,
wherein the first adhesive layer is a light curable adhesive layer.
8. The method for fabricating a light-emitting device according to claim 1 ,
wherein the second adhesive layer is an epoxy resin layer, an acrylic resin layer, or an imide resin layer.
9. The method for fabricating a light-emitting device according to claim 1 ,
wherein the second adhesive layer is a light curable adhesive layer.
10. The method for fabricating a light-emitting device according to claim 1 ,
wherein the second substrate is a glass substrate.
11. A method for fabricating a light-emitting device, comprising:
forming a separation layer over a first substrate;
forming a plurality of transistors over the separation layer;
forming a light-emitting element electrically connected to one of the plurality of transistors;
forming an adsorption layer over a support substrate;
attaching a second substrate with a thickness greater than or equal to 10 μm and less than or equal to 500 μm to the support substrate using the adsorption layer;
coating the second substrate with a first adhesive layer;
bonding the second substrate to the light-emitting element, the plurality of transistors, the separation layer, and the first substrate using the first adhesive layer;
separating the first substrate from the light-emitting element and the plurality of transistors by separation adjacent to the separation layer to form an exposed surface;
bonding a third substrate to the exposed surface using a second adhesive layer; and
separating the support substrate from the second substrate by separation between the second substrate and the adsorption layer.
12. The method for fabricating a light-emitting device according to claim 11 ,
wherein a touch sensor is formed over the second substrate, a second insulating layer is formed over the touch sensor, and a coloring layer is formed over the second insulating layer after the second substrate is attached to the support substrate.
13. The method for fabricating a light-emitting device according to claim 11 ,
wherein the separation layer contains at least one of tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, and silicon.
14. The method for fabricating a light-emitting device according to claim 11 ,
wherein the separation layer contains tungsten.
15. The method for fabricating a light-emitting device according to claim 11 , the method further comprises a step of:
forming a silicon oxide layer, a gallium oxide layer, a hafnium oxide layer, an yttrium oxide layer, an aluminum oxide layer, a silicon nitride layer, an aluminum nitride layer, a silicon oxynitride layer, an aluminum oxynitride layer, or a silicon nitride oxide layer between the separation layer and the plurality of transistors.
16. The method for fabricating a light-emitting device according to claim 11 ,
wherein the first adhesive layer is an epoxy resin layer, an acrylic resin layer, or an imide resin layer.
17. The method for fabricating a light-emitting device according to claim 11 ,
wherein the first adhesive layer is a light curable adhesive layer.
18. The method for fabricating a light-emitting device according to claim 11 ,
wherein the second adhesive layer is an epoxy resin layer, an acrylic resin layer, or an imide resin layer.
19. The method for fabricating a light-emitting device according to claim 11 ,
wherein the second adhesive layer is a light curable adhesive layer.
20. The method for fabricating a light-emitting device according to claim 11 ,
wherein the second substrate is a glass substrate.