Embedded package structure and method for manufacturing thereof
The disclosure provides an embedded package structure comprising a metal substrate, a chip module, an insulation material layer, and at least one patterned metal layer. The metal substrate has a first surface and a second surface. The chip module is disposed on the first surface of the metal substrate, and comprises at least two stacked chips being electrically connected to each. The insulation material layer covers the first surface of the metal substrate and the stacked chips and has an electrical interconnection formed therein. The patterned metal layer is positioned on the insulation material layer, and is electrically connected the chip module through the electrical interconnection. The method for manufacturing the embedded package structure also provides.
1. An embedded package structure comprising:
a metal substrate having a first surface and a second surface;
a chip module, disposed on the first surface of the metal substrate, comprising at least two stacked chips being electrically connected to each other;
an insulation material layer covering the first surface of the metal substrate and the chip module and having an electrical interconnection formed therein; and
at least one patterned metal layer, positioned on the insulation material layer, electrically connected the chip module through the electrical interconnection.
2. The embedded package structure of claim 1 , further comprising another chip module disposed on the first surface of the metal substrate.
3. The embedded package structure of claim 1 , wherein at least one of the chips is of vertical type or lateral type.
4. The embedded package structure of claim 1 , further comprising an adhesive layer or a solder positioned between the stacked chips.
5. The embedded package structure of claim 1 , wherein the stacked chips are electrically connected to each other through a conductive layer.
6. The embedded package structure of claim 1 , wherein the material of the insulation material layer comprises ABF (Ajinomoto build-up film), BT (bismaleimide-triazine resin), PI (polyimide) or FR4 (glass-epoxy resin).
7. The embedded package structure of claim 1 , wherein the material of the patterned metal layer is selected from the group consisting of copper (Cu), titanium (Ti), platinum (Pt), aluminum (Al), nickel (Ni), tungsten (W), gold (Au), zinc (Zn), tin (Sn), germanium (Ge), and a combination thereof.
8. The embedded package structure of claim 1 , further comprising a first passivation layer covering the patterned metal layer.
9. The embedded package structure of claim 8 , further comprising a second passivation layer covering the second surface of the metal substrate.
10. A method for manufacturing an embedded package structure, comprising the steps of:
providing a metal substrate having a first surface and a second surface;
forming a chip module disposed on the first surface of the metal substrate, wherein the chip module comprises at least two stacked chips electrically connected to each other;
forming an insulation material layer covering the first surface of the metal substrate and the chip module;
forming a plurality of vias through the insulation material layer; and
forming at least one patterned metal layer on the insulation material layer, wherein the vias electrically connect the chip module and the patterned metal layer.
11. The method of claim 10 , wherein the material of the metal substrate is copper (Cu) and Cu alloy.
12. The method of claim 10 , further comprising forming an adhesive layer or a solder between the stacked chips.
13. The method of claim 10 , wherein the material of the insulation material layer comprises ABF (Ajinomoto build-up film), BT (bismaleimide-triazine resin), PI (polyimide) or FR4 (glass-epoxy resin).
14. The method of claim 10 , wherein forming the vias comprises performing a laser drilling, dry etching, or wet etching process to form a plurality of via holes.
15. The method of claim 10 , wherein forming the patterned metal layer comprises metallization and etching process.
16. The method of claim 15 , wherein the metallization comprises physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD) or metal organic chemical vapor deposition (MOCVD).
17. The method of claim 15 , wherein the etching process comprises dry etching or wet etching.
18. The method of claim 10 , further comprising forming another chip module disposed on the first surface of the metal substrate.
19. The method of claim 10 , wherein forming the chip module on the first surface of the metal substrate comprises:
mounting a first chip on the first surface of the metal substrate; and
stacking a second chip on the first chip, wherein the second chip is electrically connected with the first chip.
20. The method of claim 10 , wherein forming the chip module on the first surface of the metal substrate comprises:
providing the chip module comprising at least two stacked chips; and
mounting the chip module on the first surface of the metal substrate.