Transistors incorporating metal quantum dots into doped source and drain regions
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the quantum dots are incorporated into epitaxially doped source and drain regions.
1. A transistor, comprising:
a substrate;
an isolation region formed in the substrate;
a fully recessed metal gate formed in the substrate within the isolation region, the fully recessed metal gate including a gate dielectric and a metal gate electrode;
a metal source region being a first carrier reservoir on a first side of the fully recessed metal gate, the metal source region having a contact including a first metal quantum dot;
a metal drain region being a second carrier reservoir on a second side of the fully recessed metal gate, the second side opposite the first side, the metal drain region having a contact including a second metal quantum dot; and
a channel region in contact with the fully recessed metal gate and extending between the first and second carrier reservoirs.
2. The transistor of claim 1 , wherein when the transistor is an NFET, the first and second carrier reservoirs include silicon regions doped with phosphorous or silicon phosphide, and when the transistor is a PFET, the first and second carrier reservoirs include silicon regions doped with boron or boron silicon germanium.
3. The transistor of claim 1 wherein, when the transistor is a PFET, the first and second carrier reservoirs are lined with platinum silicide, and when the transistor is an NFET, the first and second carrier reservoirs are lined with nickel silicide, the silicide thicknesses ranging from 1-20 nm.
4. The transistor of claim 1 wherein, when the transistor is a PFET, the first and second carrier reservoirs are lined with platinum silicide, and when the transistor is an NFET, the first and second carrier reservoirs are lined with a rare earth metal silicide, the silicide thicknesses ranging from 1-20 nm.
5. The transistor of claim 4 wherein the rare earth metal silicide includes one or more of yttrium silicide or erbium silicide.
6. The transistor of claim 1 wherein the metal gate electrode is made of tungsten and includes a liner of thickness 1-10 nm made of titanium or titanium nitride.
7. The transistor of claim 1 wherein the metal gate electrode is made of copper and includes a liner of thickness 1-10 nm made of tantalum nitride.
8. The transistor of claim 1 wherein the gate dielectric has a high dielectric constant greater than about 4.0.
9. The transistor of claim 1 wherein the channel region is epitaxial.
10. The transistor of claim 9 wherein the channel region is in contact with at least three sides of the fully recessed metal gate.
11. A transistor array layout, comprising:
a plurality of transistors having source and drain regions, the source and drain regions being doped silicon carrier reservoirs;
a first regular surface pattern of metal quantum dots having planar surfaces, the metal quantum dots embedded within the source and drain regions such that all sidewall surfaces of the metal quantum dots are enclosed by the respective doped silicon carrier reservoir; and
a second regular surface pattern of gate array elements disposed between adjacent ones of the metal quantum dots.
12. The transistor array layout of claim 11 wherein the first and second regular surface patterns have different shapes.
13. The transistor array layout of claim 11 wherein shapes of the metal quantum dots, as seen from a top plan view, include one or more of circles, ellipses, or polygons.
14. The transistor array layout of claim 11 wherein the metal quantum dots are arranged in a periodic lattice structure.
15. A transistor comprising:
a substrate;
an isolation region in the substrate;
a non-planar conducting channel formed in the substrate;
a source region formed in the substrate and in contact with the non-planar conducting channel, the source region including a first doped carrier reservoir that, in operation, injects charge into the non-planar conducting channel;
a drain region formed in the substrate and in contact with the non-planar conducting channel, the drain region including a second doped carrier reservoir that, in operation, injects charge into the non-planar conducting channel;
metal quantum dots embedded as contacts in the source and drain regions such that a top side of the metal quantum dots are coplanar with a top side of the source and drain regions, and all other sides of the metal quantum dots are enclosed by silicon; and
a fully recessed metal gate formed in the substrate.
16. The transistor of claim 15 wherein the non-planar conducting channel is made of an epitaxially grown material.
17. The transistor of claim 15 wherein the fully recessed metal gate contacts at least three sides of the non-planar conducting channel.
18. The transistor of claim 15 wherein the fully recessed metal gate includes a gate dielectric having a dielectric constant greater than about 4.0.
19. The transistor of claim 15 wherein the first and second doped carrier reservoirs each have a doping concentration within the range of about 1.0 E19-1.0 E21 atoms/cm 3 .
20. The transistor of claim 15 further comprising metal silicides adjacent to the metal quantum dots, the metal silicides incorporating dopants from the first and second doped carrier reservoirs.