IP Library Granted Patent US 9,112,070
Granted Patent B2
US 9,112,070 · App. 13/932,516 · Granted Aug 18, 2015

Solar cell and method of manufacturing the same

Inventors: Young Hyun Cho (Chungcheongbuk-do, KR); Ji Sun Kim (Incheon, KR); Eun Joo Lee (Seoul, KR); Jong Youb Lim (Chungcheongbuk-do, KR)
Assignee: Shinshung Solar Energy Co., Ltd.
H01L31/022425H01L31/0684H01L31/1804Y02E10/52
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Quick Facts
Patent No.
US 9,112,070
App. No.
13/932,516
Granted
Aug 18, 2015
Kind
B2
Abstract

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with a first conductive type impurity through which a via hole passing from a first surface of the semiconductor substrate to a second surface thereof facing the first surface is formed, wherein the first surface is a light receiving surface, upper and lower emitter layers respectively formed on upper and lower surfaces of the semiconductor substrate and doped with a second conductive type impurity that is different from the first conductive type impurity, current collecting layers formed on sidewalls of the via hole and doped with a higher concentration of the first conductive type impurity than that of the semiconductor substrate, a contact electrode extending from the first surface of the semiconductor substrate to the second surface thereof so as to fill the via hole, and upper and lower electrodes respectively contacting the upper and lower emitter layers.

Claims (8)

1. A solar cell comprising:

a semiconductor substrate doped with a first conductive type impurity through which a via hole passing from a first surface of the semiconductor substrate to a second surface thereof facing the first surface is formed, wherein the first surface is a light receiving surface;

upper and lower emitter layers respectively formed on upper and lower surfaces of the semiconductor substrate and doped with a second conductive type impurity that is different from the first conductive type impurity;

current collecting layers formed on sidewalls of the via hole and doped with a higher concentration of the first conductive type impurity than that of the semiconductor substrate;

a contact electrode extending from the first surface of the semiconductor substrate to the second surface thereof so as to fill the via hole; and

upper and lower electrodes respectively contacting the upper and lower emitter layers.

2. The solar cell according to claim 1 , further comprising upper and lower anti-reflection coatings formed on the upper and lower emitter layers, respectively.

3. The solar cell according to claim 2 , wherein the upper and lower anti-reflection coatings each comprise a plurality of layers with different indexes of refraction.

Assignments (4)
SECURITY INTEREST Recorded Dec 24, 2024
From: SOURCE ENERGY SERVICES CANADIAN LOGISTICS LP, BY ITS GENERAL PARTNER SOURCE ENERGY SERVICES CANADIAN LOGISTICS LP GP LTD.
To: CANADIAN IMPERIAL BANK OF COMMERCE
Reel/Frame 069675/0938 →
SECURITY INTEREST Recorded Dec 20, 2024
From: SOURCE ENERGY SERVICES CANADIAN LOGISTICS LP
To: SILVER POINT FINANCE, LLC
Reel/Frame 069657/0586 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2015
From: CHO, YOUNG HYUN; LEE, EUN JOO
To: SHINSHUNG SOLAR ENERGY CO., LTD.
Reel/Frame 036076/0803 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2013
From: KIM, JI SOO; KIM, HO SIK; KIM, JI SUN; LIM, JONG YOUB; HWANG, YEON HEE; CHOI, HOON JOO; JO, JEONG JAE
To: SHINSHUNG SOLAR ENERGY CO., LTD.
Reel/Frame 031490/0047 →
Priority Claims (1)
KR 10-2012-0071206 · Jun 29, 2012 · national
Continuity (1)
Related Publication 20140158188A1 · Jun 12, 2014