Methods of forming silicon-containing dielectric materials and semiconductor device structures
A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.
1. A method of forming a silicon-containing dielectric material, comprising:
forming a plasma comprising nitrogen radicals;
chemisorbing the nitrogen radicals onto a substrate;
terminating the plasma; and
after chemisorbing the nitrogen radicals onto the substrate, exposing the substrate comprising the chemisorbed nitrogen to a silicon-containing precursor in a non-plasma environment to form monolayers of silicon bonded to the chemisorbed nitrogen on the substrate.
2. The method of claim 1 , wherein forming the plasma comprising the nitrogen radicals comprises dissociating a nitrogen radical precursor into the nitrogen radicals.
3. The method of claim 2 , wherein dissociating the nitrogen radical precursor into the nitrogen radicals comprises dissociating the nitrogen radical precursor selected from the group consisting of elemental nitrogen, nitrous oxide, ammonia, nitrogen oxide, azide, an azide derivative, dinitrogen pentoxide, hydrazine, and a hydrazine derivative into the nitrogen radicals.
4. The method of claim 1 , wherein forming the plasma comprising the nitrogen radicals comprises forming the plasma comprising the nitrogen radicals and helium.
5. The method of claim 1 , wherein chemisorbing the nitrogen radicals onto the substrate and exposing the substrate to the silicon-containing precursor in the non-plasma environment comprises forming monolayers of nitrogen and silicon on the substrate as the substrate is heated.
6. The method of claim 1 , wherein exposing the substrate to the silicon-containing precursor comprises exposing the substrate to silane to form the monolayers of silicon on the substrate.
7. The method of claim 1 , wherein exposing the substrate to the silicon-containing precursor comprises exposing the substrate to trimethylsilane and silane to form monolayers of carbon and silicon on the substrate.
8. The method of claim 1 , further comprising repeating the acts of forming the plasma comprising the nitrogen radicals, chemisorbing the nitrogen radicals onto the substrate, and after chemisorbing the nitrogen radicals onto the substrate, exposing the substrate comprising the chemisorbed nitrogen to the silicon-containing precursor to form the silicon-containing dielectric material at a desired thickness.
9. The method of claim 1 , wherein forming the plasma comprising the nitrogen radicals, chemisorbing the nitrogen radicals onto the substrate, and after chemisorbing the nitrogen radicals onto the substrate, exposing the substrate comprising the chemisorbed nitrogen to the silicon-containing precursor in the non-plasma environment are conducted at a temperature between about 20° C. and about 300° C.
10. The method of claim 1 , further comprising reducing a pressure of a chamber in which the silicon-containing dielectric material is formed while the substrate is exposed to the silicon-containing precursor.
11. A method of forming a silicon-containing dielectric material, comprising:
forming a plasma comprising nitrogen radicals and oxygen radicals;
exposing a substrate to the plasma to absorb oxygen onto the substrate; and
exposing the substrate comprising the absorbed oxygen to a silicon-containing precursor to form monolayers of silicon bonded to the absorbed oxygen on the substrate.
12. The method of claim 11 , wherein forming the plasma comprising the nitrogen radicals and the oxygen radicals comprises forming the plasma from elemental nitrogen and nitrous oxide or elemental nitrogen and carbon dioxide.
13. The method of claim 11 , wherein forming the plasma comprising the nitrogen radicals and the oxygen radicals comprises forming the plasma from elemental nitrogen, an oxygen-containing precursor, and helium.
14. The method of claim 11 , wherein forming the plasma comprising the nitrogen radicals and the oxygen radicals comprises forming the plasma from elemental nitrogen and nitrous oxide and wherein exposing the substrate comprising the absorbed oxygen to the silicon-containing precursor comprises exposing the substrate comprising the absorbed oxygen to silane to form silicon dioxide.
15. The method of claim 11 , wherein forming the plasma comprising the nitrogen radicals and the oxygen radicals comprises forming the plasma from elemental nitrogen and carbon dioxide and wherein exposing the substrate comprising the absorbed oxygen to the silicon-containing precursor comprises exposing the substrate comprising the absorbed oxygen to trimethylsilane to form silicon carbon oxide.
16. A method of forming a silicon-containing dielectric material, comprising:
forming a plasma comprising nitrogen radicals and oxygen radicals;
exposing a substrate to the plasma to absorb oxygen onto the substrate; and
exposing the substrate comprising the absorbed oxygen to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate.
17. The method of claim 11 , wherein exposing the substrate comprising the absorbed oxygen to the silicon-containing precursor comprises exposing the substrate comprising the absorbed oxygen to trimethylsilane or silane.
18. The method of claim 11 , further comprising repeating the acts of forming the plasma comprising the nitrogen radicals and the oxygen radicals, exposing the substrate to the plasma to absorb the oxygen onto the substrate, and exposing the substrate comprising the absorbed oxygen to the silicon-containing precursor to form monolayers of the silicon-containing dielectric material at a desired thickness.
19. A method of forming a semiconductor device structure comprising:
forming stacks comprising tungsten, at least one carbon electrode, and at least one chalcogenide material on a substrate; and
forming at least one silicon-containing dielectric material on each of the stacks, comprising:
forming a plasma comprising nitrogen radicals;
absorbing nitrogen from the plasma onto the substrate;
terminating the plasma; and
exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of the at least one silicon-containing dielectric material on the stacks.
20. The method of claim 19 , further comprising repeating the acts of absorbing the nitrogen from the plasma onto the substrate, terminating the plasma, and exposing the substrate to the silicon-containing precursor to conformally form the at least one silicon-containing dielectric material on the stacks at a desired thickness.
21. A method of forming a silicon-containing dielectric material, comprising:
forming a plasma comprising nitrogen radicals;
chemisorbing the nitrogen radicals onto a substrate;
terminating the plasma; and
exposing the substrate comprising the chemisorbed nitrogen to a silicon-containing precursor in a non-plasma environment to form monolayers of silicon bonded to the chemisorbed nitrogen on the substrate, the monolayers of silicon forming a silicon-containing dielectric material comprising a silicon oxide material, a silicon nitride material, a silicon carbon nitride material, or a silicon carbon oxide material on the substrate.
22. The method of claim 19 , wherein forming the stacks comprising the tungsten, the at least one carbon electrode, and the at least one chalcogenide material comprises forming the stacks comprising the tungsten, a first carbon electrode on the tungsten, a first chalcogenide material on the first carbon electrode, a second carbon electrode on the first chalcogenide material, a second chalcogenide material on the second carbon electrode, and a third carbon electrode on the second chalcogenide material.
23. The method of claim 19 , wherein forming the at least one silicon-containing dielectric material on each of the stacks comprises forming a silicon carbon nitride (SiC x N y ) on each of the stacks.
24. The method of claim 19 , wherein forming the at least one silicon-containing dielectric material on each of the stacks comprises forming a silicon oxide (SiO x ), a silicon nitride (SiN y ), or a silicon carbon oxide (SiC x O y ) on each of the stacks.
25. The method of claim 19 , wherein forming the at least one silicon-containing dielectric material on each of the stacks comprises forming the at least one silicon-containing dielectric material on the stacks, the stacks separated from one another by a distance of between about 50 Å and about 220 Å.