Bumpless build-up layer and laminated core hybrid structures and methods of assembling same

1. A process comprising:

embedding a semiconductor device in a bumpless build-up (BBUL) structure;

assembling the BBUL structure to a laminated-core structure; and

fusing the BBUL structure at a bond pad thereof to the laminated-core structure at a plated through hole (PTH) thereof by plating a conductive material, wherein the fusing forms a hollow cylindrical reinforcement plating that is closed on one end thereof.

2. The process of claim 1 , wherein fusing the BBUL structure and the laminated-core structure is achieved by electroless plating a copper material to form the reinforcement plating.

3. The process of claim 1 , further including assembling a land-side structure to the laminated-core structure.

4. The process of claim 1 , further including filling the PTH with a filler material that includes an organic material and an inorganic particulate.

5. The process of claim 1 , wherein the BBUL structure includes a die side, the process further including assembling a die-side contact pad at the die side.

6. The process of claim 1 , further including:

assembling a land-side structure to the laminated-core structure; and

assembling the land-side structure to a foundation substrate.

7. A method of forming a semiconductor apparatus comprising:

embedding a semiconductive die in a bumpless build-up layer (BBUL) structure;

abutting a laminated-core structure to the BBUL structure;

electrically coupling the laminated-core structure and the BBUL structure by forming an electrically conductive body that is integral to both, wherein the electrically conductive body is a hollow cylinder that is closed on one end thereof.

8. The method of claim 7 , wherein the laminated-core structure includes a copper plated through hole, wherein the BBUL structure includes a copper subsequent bond pad, and wherein the electrically conductive body is copper that is fused to the copper plated through hole and to the copper subsequent bond pad.

9. The method of claim 7 , wherein the laminated-core structure includes a copper plated through hole (PTH) having a width in a range from 100 μm to 120 μm and a thickness in a range from 400 μm to 1,400 μm, wherein the BBUL structure includes a copper subsequent bond pad, and wherein the electrically conductive body is copper that is fused to the copper plated through hole and to the copper subsequent bond pad.

10. The method of claim 7 , wherein the electrically conductive body is fused to a plated through hole in the laminated-core structure and to a subsequent bond pad on the BBUL structure.

11. The method of claim 7 , wherein embedding the semiconductive die in the BBUL structure comprises embedding a first semiconductive die in the BBUL structure, and further comprising embedding a subsequent semicondictive die in the BBUL structure.

12. The method of claim 7 , wherein the BBUL structure includes a die side and a die-side contact pad formed on the BBUL structure die side.

13. The method of claim 12 , further comprising mounting a package-on-package apparatus on the BBUL structure die side, such that the package-on-package apparatus is electrically coupled at the die-side contact pad.

14. The method of claim 7 , further including forming a foundation substrate, and mounting the laminated core structure to the foundation substrate.

15. A method of forming a semiconductive device comprising:

embedding a die in a bumpless build-up layer (BBUL), wherein the die includes an active surface and a backside surface, the BBUL including:

a dielectric first film and a first contact disposed in the dielectric first film and making contact with the die at the active surface; and

a dielectric subsequent film and a subsequent contact disposed in the dielectric subsequent film, wherein the subsequent contact is coupled to the first contact and further including a subsequent contact pad;

assembling a laminated-core structure at the subsequent contact pad, wherein the laminated-core structure includes:

a plated through hole (PTH) upon a PTH wall; and

a reinforcement plating that is fused to the PTH and the subsequent contact pad, wherein the reinforcement plating is a hollow cylinder that is closed on one end thereof; and

coupling a land-side structure to the PTH, wherein the land-side structure includes laminated-core land-interface bond pads that are coupled to the PTH, wherein the laminated-core land-interface bond pads are in electrical contact with corresponding land-side contactor pads of the land-side structure.

16. The method of claim 15 , further including assembling a foundation substrate at the land-side contact pads.

17. The method of claim 15 , wherein the laminated-core structure includes a copper plated through hole, wherein the BBUL structure includes a copper subsequent bond pad, and wherein the reinforcement plating is copper that is fused to the copper plated through hole and to the copper subsequent bond pad.

18. The method of claim 15 , wherein the laminated-core structure includes a copper plated through hole (PTH) having a width in a range from 100 μm to 350 μm and a thickness in a range from 400 μm to 1,400 μm, wherein the BBUL structure includes a copper subsequent bond pad, and wherein the reinforcement plating is copper that is fused to the copper plated through hole and to the copper subsequent bond pad.

19. The method of claim 15 , wherein the BBUL structure includes a die side having a die-side contact pad thereon.

20. The method of claim 19 , further comprising mounting a package-on-package apparatus on the BBUL structure die side, such that the package-on-package apparatus is electrically coupled at the die-side contact pad.