NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
A nitride-based compound semiconductor device includes a substrate, a first nitride-based compound semiconductor layer that is formed above the substrate with a buffer layer interposed between them, a second nitride-based compound semiconductor layer that is formed on the first nitride-based compound semiconductor layer and that has a larger band gap than a band gap of the first nitride-based compound semiconductor layer, and an electrode that is formed on the second nitride-based compound semiconductor layer. The second nitride-based compound semiconductor layer has a region in which carbon is doped near a surface of the second nitride-based compound semiconductor layer.
1 . A nitride-based compound semiconductor device comprising:
a substrate;
a first nitride-based compound semiconductor layer that is formed above the substrate with a buffer layer interposed therebetween;
a second nitride-based compound semiconductor layer that is formed on the first nitride-based compound semiconductor layer and that has a larger band gap than a band gap of the first nitride-based compound semiconductor layer; and
an electrode that is formed on the second nitride-based compound semiconductor layer, wherein
the second nitride-based compound semiconductor layer has a region in which carbon is doped near a surface of the second nitride-based compound semiconductor layer.
2 . The nitride-based compound semiconductor device according to claim 1 , wherein the region in which the carbon is doped has a depth of equal to or smaller than 10 nanometers from the surface of the second nitride-based compound semiconductor layer.
3 . The nitride-based compound semiconductor device according to claim 1 , wherein the carbon is doped using a resonant nuclear reaction with hydrogen.
4 . The nitride-based compound semiconductor device according to claim 2 , wherein the carbon is doped through ion implantation.
5 . The nitride-based compound semiconductor device according to claim 1 , wherein an irradiation defect is formed in a region at 3 micrometers to 4 micrometers from the surface of the second nitride-based compound semiconductor layer.
6 . The nitride-based compound semiconductor device according to claim 1 , wherein the buffer layer or the second nitride-based compound semiconductor layer has a gallium vacancy formed by breakdown of a complex defect consisting of the gallium vacancy and hydrogen.
7 . The nitride-based compound semiconductor device according to claim 1 , wherein the first nitride-based compound semiconductor layer is made of GaN and the second nitride-based compound semiconductor layer is made of Al x Ga 1-x N (0<x≦1).
8 . The nitride-based compound semiconductor device according to claim 1 , wherein the nitride-based compound semiconductor device is a field-effect transistor or a Schottky barrier diode.
9 . The nitride-based compound semiconductor device according to claim 1 , wherein the nitride-based compound semiconductor device is a Schottky barrier diode.