Method for forming identification marks on refractory material single crystal substrate, and refractory material single crystal substrate
An identification mark formation method for forming an identification mark on a refractory material single crystal substrate that is made of one selected from the group consisting of sapphire, gallium nitride, aluminum nitride, diamond, boron nitride, zinc oxide, gallium oxide, and titanium dioxide is disclosed. The method includes: (a) scanning a principal surface of the refractory material single crystal substrate with a laser beam at a first energy density such that a groove is formed in the principal surface of the refractory material single crystal substrate, thereby forming an identification mark in the principal surface of the refractory material single crystal substrate; and (b) scanning an inside of the groove of the refractory material single crystal substrate with a laser beam at a second energy density that is lower than the first energy density.
1. A method for forming an identification mark on a refractory material single crystal substrate, the refractory material single crystal substrate being made of a single crystal which is formed by one selected from the group consisting of sapphire, gallium nitride, aluminum nitride, diamond, boron nitride, zinc oxide, gallium oxide, and titanium dioxide, the method comprising:
(a) scanning a principal surface of the refractory material single crystal substrate with a laser beam at a first energy density such that a groove is formed in the principal surface of the refractory material single crystal substrate, thereby forming an identification mark which is constituted of one or more grooves in the principal surface of the refractory material single crystal substrate; and
(b) scanning an inside of the groove formed in the principal surface of the refractory material single crystal substrate with a laser beam at a second energy density that is lower than the first energy density.
2. The method of claim 1 , wherein a width of the groove is not less than 50 μm, and a depth of the groove is not less than 10 μm.
3. The method of claim 1 , wherein the surface roughness Ra of an internal surface of the groove is not more than 1 μm.
4. The method of claim 1 , further comprising
(c) after step (b), performing mechanical polishing on the principal surface of the refractory material single crystal substrate.
5. The method of claim 4 wherein, after step (c), gas phase etching is performed on the principal surface of the refractory material single crystal substrate.
6. The method of claim 1 , wherein the surface roughness Ra of the principal surface of the refractory material single crystal substrate is not less than 0.1 nm and not more than 2.0 nm.