Thin film transistor and display substrate having the same

1. A display substrate, comprising:

a base substrate;

a semiconductor active layer disposed on the base substrate;

a first conductive pattern group insulated from the semiconductor active layer and including a gate electrode and a first capacitor electrode insulated from the gate electrode;

a second conductive pattern group insulated from the first conductive pattern group; and

an organic light emitting device,

the second conductive pattern group comprises a source electrode, a drain electrode, a data line providing data signals to the organic light emitting device, a source voltage supply line extending along a same direction of the data line and receiving a source voltage different from a voltage applied to the data line, and a second capacitor electrode overlapped with the first capacitor electrode and protruding from the source voltage supply line;

each of the source electrode, the drain electrode, the data line, the source voltage supply line, and the second capacitor electrode including a first conductive layer comprising one of copper, a copper alloy, aluminum, and an aluminum alloy, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed under the first conductive layer; and

the second conductive layer and the third conductive layer comprise a molybdenum-nickel-titanium alloy, and the molybdenum-nickel-titanium alloy contains nickel of about 15 at % to about 30 at % with respect to an aggregate of the molybdenum-nickel-titanium alloy, and titanium of about 10 at % to about 20 at % with respect to the aggregate of the molybdenum-nickel-titanium alloy.

2. The display substrate of claim 1 , wherein the semiconductor active layer comprises a semiconductor oxide.

3. The display substrate of claim 2 , wherein the semiconductor oxide comprises at least one of Zn, In, Ga, Sn, and a mixture thereof.

4. A display substrate, comprising:

a base substrate;

a first thin film transistor disposed on the base substrate;

a second thin film transistor disposed on the base substrate and electrically connected to the first thin film transistor;

a data line;

a source voltage supply line extending along a same direction of the data line and receiving a source voltage different from a voltage applied to the data line;

a first capacitor electrode;

a second capacitor electrode overlapped with the first capacitor electrode and protruding from the source voltage supply line; and

an organic light emitting device connected to the second thin film transistor;

the first thin film transistor comprises a first semiconductor active layer, a first gate electrode, a first source electrode, and a first drain electrode;

the second thin film transistor comprises a second semiconductor active layer, a second gate electrode, a second source electrode, and a second drain electrode;

the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, the data line, the source voltage supply line, and the second capacitor electrode are disposed on a same layer; and

each of the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, the data line, the source voltage supply line, and the second capacitor electrode comprises:

a first conductive layer that includes one of copper, a copper alloy, aluminum, and an aluminum alloy;

a second conductive layer disposed on the first conductive layer; and

a third conductive layer disposed under the first conductive layer; and

the second conductive layer and the third conductive layer comprise a molybdenum-nickel-titanium alloy, and the molybdenum-nickel-titanium alloy contains nickel of about 15 at % to about 30 at % with respect to an aggregate of the molybdenum-nickel-titanium alloy, and titanium of about 10 at % to about 20 at % with respect to the aggregate of the molybdenum-nickel-titanium alloy.

5. The display substrate of claim 4 , wherein at least one of the first semiconductor active layer and the second semiconductor active layer comprises a semiconductor oxide.

6. The display substrate of claim 5 , wherein the semiconductor oxide comprises at least one of Zn, In, Ga, Sn, and a mixture thereof.

7. The display substrate of claim 4 , further comprising:

a gate insulating layer disposed between the first semiconductor active layer and the first gate electrode, and between the second semiconductor active layer and the second gate electrode; and

an inter-insulating layer disposed on the first and second gate electrodes;

wherein the first and second semiconductor active layers are disposed on the base substrate.

8. The display substrate of claim 4 , further comprising:

a gate insulating layer disposed between the first semiconductor active layer and the first gate electrode;

a first inter-insulating layer that covers the first gate electrode; and

a second inter-insulating layer disposed on the first inter-insulating layer;

wherein the first semiconductor active layer is disposed on the base substrate, the first and second gate electrodes are disposed on the gate insulating layer, and the second semiconductor active layer is disposed on the first inter-insulating layer.

9. The display substrate of claim 4 , further comprising a gate insulating layer disposed between the first semiconductor active layer and the first gate electrode and between the second semiconductor active layer and the second gate electrode, wherein the first and second semiconductor active layers are disposed on the gate insulating layer.